公开(公告)号：EP0821396A3

公开(公告)日：2000-09-20

申请号：EP97304913.3

申请日：1997-07-04

申请人： Applied Materials, Inc.

发明人： Buie, Melisa J. ,  Poslavsky, Leonid ,  Lewis, Jennifer

IPC分类号： H01J37/32

CPC分类号： H01J37/32935 ,  H01J37/32972 ,  H01J37/3299 ,  H01J2237/334

摘要： The disclosure relates to a method and apparatus for performing in situ measurement of etch uniformity within a semiconductor wafer processing system. Specifically, the apparatus and concomitant method analyzes optical emission spectroscopy (OES) data produced by an OES system (100). The analysis computes the first derivative of the OES data as the data is acquired. When the data meets a particular trigger criterion, the value of the first derivative is correlated with a particular uniformity value. As such, the system produces a uniformity value for a semiconductor wafer using an in situ measurement technique.

公开(公告)号：EP0821396A2

公开(公告)日：1998-01-28

申请号：EP97304913.3

申请日：1997-07-04

申请人： Applied Materials, Inc.

发明人： Buie, Melisa J. ,  Poslavsky, Leonid ,  Lewis, Jennifer

IPC分类号： H01J37/32

CPC分类号： H01J37/32935 ,  H01J37/32972 ,  H01J37/3299 ,  H01J2237/334

摘要： The disclosure relates to a method and apparatus for performing in situ measurement of etch uniformity within a semiconductor wafer processing system. Specifically, the apparatus and concomitant method analyzes optical emission spectroscopy (OES) data produced by an OES system (100). The analysis computes the first derivative of the OES data as the data is acquired. When the data meets a particular trigger criterion, the value of the first derivative is correlated with a particular uniformity value. As such, the system produces a uniformity value for a semiconductor wafer using an in situ measurement technique.

摘要翻译： 本公开涉及用于在半导体晶片处理系统内进行原位测量蚀刻均匀性的方法和装置。 具体地，该装置和伴随方法分析由OES系统（100）产生的光发射光谱（OES）数据。 当获取数据时，分析计算OES数据的一阶导数。 当数据满足特定的触发条件时，一阶导数的值与特定的均匀性值相关。 因此，系统使用原位测量技术为半导体晶片产生均匀性值。