发明公开
- 专利标题： A high temperature, high flow rate chemical vapor deposition apparatus and related methods
- 专利标题（中）： 具有高流速和相关的方法以高温气相沉积设备
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申请号： EP98300509.1申请日： 1998-01-26
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公开(公告)号： EP0855735A2公开(公告)日： 1998-07-29
- 发明人: Zhao, Jun , Luo, Lee , Liang, Xiao Jin , Wang, Jia-Xiang , Sajoto, Talex , Wolff, Stefan , Selyutin, Leonid , Sinha, Ashok
- 申请人： APPLIED MATERIALS, INC.
- 申请人地址： 3050 Bowers Avenue, M/S 2061 Santa Clara, California 95054-3299 US
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 当前专利权人地址： 3050 Bowers Avenue, M/S 2061 Santa Clara, California 95054-3299 US
- 代理机构： Bayliss, Geoffrey Cyril
- 优先权： US37659P 19970124; US799415 19970212
- 主分类号： H01J37/32
- IPC分类号： H01J37/32
摘要：
The disclosure relates to an apparatus for depositing titanium films at rates up to 200 Å/minute on semiconductor substrates from a titanium tetrachloride source in a reactor chamber (30). In accordance with an embodiment of the invention, a ceramic heater assembly (33) with an integrated RF plane (103) for bottom powered RF capability allows PECVD deposition at a temperature of at least 40°C for more efficient plasma treatment. A thermal choke (123) isolates the heater from its support shaft (121) reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater.
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