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19 条记录 (耗时 0.013 秒)

    Process and apparatus for depositing titanium layers
    2.
    发明公开
    Process and apparatus for depositing titanium layers 失效
    Verfahren und Vorrichtung zur Abscheidung von Titanschichten

    公开(公告)号：EP0855452A1

    公开(公告)日：1998-07-29

    申请号：EP98300508.3

    申请日：1998-01-26

    申请人： APPLIED MATERIALS, INC.

    发明人： Zhao, Jun ,  Luo, Lee ,  Liang, Xiao Jin ,  Wang, Jia-Xiang ,  Wolff, Stefan ,  Sajoto, Talex

    IPC分类号： C23C16/44 ,  C23C16/52

    CPC分类号： H01J37/3244 ,  C23C16/4401 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/4586 ,  C23C16/52 ,  H01J37/32082 ,  H01J2237/2001 ,  H01J2237/3321

    摘要： The disclosure relates to methods and apparatus for depositing titanium films in a CVD system (10) using a heater heated to at least about 400°C at a pressure of about 1-10 torr in the reactor chamber (30), introducing a reactant gas and source gas at a reactant source gas flow ratio of less than about 250:1, and applying RF energy from a supply (5) to form a plasma. The present invention provides deposition rates up to 200 Å/minute on semiconductor substrates (36) from a titanium tetrachloride source, according to specific embodiments.

    摘要翻译： 本公开涉及在CVD系统（10）中使用在反应器室（30）中以约1-10托的压力加热至至少约400℃的加热器沉积钛膜的方法和装置，引入反应气体 和反应物源气体流量比小于约250:1的源气体，以及从电源（5）施加RF能量以形成等离子体。 根据具体实施方案，本发明在四氯化钛源的半导体衬底（36）上提供高达200安培斯/分钟的沉积速率。

    Components peripheral to the pedestal in the gas flow path within a chemical vapor deposition chamber
    3.
    发明公开
    Components peripheral to the pedestal in the gas flow path within a chemical vapor deposition chamber 失效
    的腔室中的部件的外围，以通过气流的方式基部用于化学气相沉积

    公开(公告)号：EP0818558A1

    公开(公告)日：1998-01-14

    申请号：EP97305148.5

    申请日：1997-07-11

    申请人： Applied Materials, Inc.

    发明人： Zhao, Jun ,  Sinha, Ashok ,  Tepman, Avi ,  Chang, Mei ,  Luo, Lee ,  Schrieber, Alex ,  Sajoto, Talex ,  Wolff, Stefan ,  Dornfest, Charles ,  Danek, Michael

    IPC分类号： C23C16/00

    CPC分类号： C23C16/45508 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/4585 ,  C23C16/46 ,  C23C16/5096 ,  C23C16/54 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32834 ,  H01J2237/2001

    摘要： A substrate processing chamber, particularly a chemical vapor deposition (CVD) chamber used both for thermal deposition of a conductive material and a subsequently performed plasma process. The arrangement reduces thermal deposition of the conductive material on peripheral portions of the pedestal (140) supporting a wafer (142) and in a pumping channel (160) exhausting the chamber. A peripheral ring (146) placed on the pedestal, preferably also used to center the wafer, is thermally isolated from the pedestal so that its temperature is kept substantially lower than that of the wafer. Despite its thermal isolation, the peripheral ring is electrically connected to the pedestal to prevent arcing. The pumping channel is lined with various elements (166, 167, 170, 172) some of which are electrically floating and which are designed so that conductive material deposited on these elements do not deleteriously affect a plasma generated for processing the wafer.

    摘要翻译： 的处理室的基板，特别是化学气相沉积（CVD）腔室既用于导电性材料的热沉积和随后进行等离子处理。 该布置减少了支撑晶片（142）的基座（140）的周缘部的导电材料的热沉积和在排出腔室中的泵送通道（160）。 放置在基座上的外周环（146），所以优选使用居中晶片，是热从基座分离所以没有它的温度保持比晶片的低得多。 尽管它的热隔离，外围环电连接到所述基座，以防止电弧放电。 抽气通道衬有各种元件（166，167，170，172）其中一些是电浮置的，并且被设计成没有沉积在这些元素的导电材料不有害地影响用于处理晶片产生等离子体。

    Plasma reactors for processing semiconductor wafers
    4.
    发明公开
    Plasma reactors for processing semiconductor wafers 失效
    Plasmareaktoren zur Behandlung von Halbleiterscheiben

    公开(公告)号：EP0715334A2

    公开(公告)日：1996-06-05

    申请号：EP95307269.1

    申请日：1995-10-13

    申请人： APPLIED MATERIALS, INC.

    发明人： Zhao, Jun ,  Smyth, Kenneth ,  McNutt, Gerald ,  Wolff, Stefan ,  Taylor, William Nixon, Jr.

    IPC分类号： H01J37/32 ,  H05H1/46

    CPC分类号： H01J37/32174 ,  H01J37/32082 ,  H01J37/32935 ,  H01J37/3299 ,  H05H1/46

    摘要： The disclosure relates to a plasma chamber RF excitation system including a high frequency RF power source (12a) having a fixed RF match circuit (30) at its output and sensing and control apparatus (32) for sensing the amount of RF power delivered by the RF power source and for regulating the output power level of the RF power source so as to maintain the RF power delivered by the RF power source at a desired level, and an RF plasma chamber including an RF radiator. The power source is mounted proximate or directly on the plasma chamber (10) so that the distance between them is much less than an eighth of a wavelength at the frequency of the RF source. The system may further include an endpoint detector (12c) for a plasma etch process or a chamber cleaning process which halts the process when the VSWR or reflected power ceases to change in response to the progress of the etch process.

    摘要翻译： 本发明涉及一种包括在其输出端具有固定RF匹配电路（30）的高频RF电源（12a）的等离子体室RF激励系统，以及用于感测由 RF电源并且用于调节RF电源的输出功率电平，以便将由RF电源提供的RF功率保持在期望的电平，以及包括RF辐射器的RF等离子体室。 电源靠近或直接安装在等离子体室（10）上，使得它们之间的距离远小于在RF源的频率处的波长的八分之一。 该系统还可以包括用于等离子体蚀刻工艺的端点检测器（12c）或者当VSWR或反射功率响应于蚀刻工艺的进行而停止改变时停止该工艺的室清洁过程。

    Components peripheral to the pedestal in the gas flow path within a chemical vapor deposition chamber
    6.
    发明公开
    Components peripheral to the pedestal in the gas flow path within a chemical vapor deposition chamber 失效
    的腔室中的部件的外围，以通过气流的方式基部用于化学气相沉积

    公开(公告)号：EP1172458A2

    公开(公告)日：2002-01-16

    申请号：EP01118816.6

    申请日：1997-07-11

    申请人： Applied Materials, Inc.

    发明人： Zhao, Jun ,  Sinha, Ashok ,  Tempman, Avi ,  Chang, Mei ,  Luo, Lee ,  Schrieber, Alex ,  Sajoto, Talex ,  Wolff, Stefan ,  Dornfest, Charles ,  Danek, Michael

    IPC分类号： C23C16/44 ,  H01L21/00

    CPC分类号： C23C16/45508 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/4585 ,  C23C16/46 ,  C23C16/5096 ,  C23C16/54 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32834 ,  H01J2237/2001

    摘要： A substrate processing chamber, particularly a chemical vapor deposition (CVD) chamber used both for thermal deposition of a conductive material and a subsequently performed plasma process. The arrangement reduces thermal deposition of the conductive material on peripheral portions of the pedestal (140) supporting a wafer (142) and in a pumping channel (160) exhausting the chamber. A peripheral ring (146) placed on the pedestal, preferably also used to center the wafer, is thermally isolated from the pedestal so that its temperature is kept substantially lower than that of the wafer. Despite its thermal isolation, the peripheral ring is electrically connected to the pedestal to prevent arcing. The pumping channel is lined with various elements (166, 167, 170, 172) some of which are electrically floating and which are designed so that conductive material deposited on these elements do not deleteriously affect a plasma generated for processing the wafer.

    摘要翻译： 的处理室的基板，特别是化学气相沉积（CVD）腔室既用于导电性材料的热沉积和随后进行等离子处理。 该布置减少了支撑晶片（142）的基座（140）的周缘部的导电材料的热沉积和在排出腔室中的泵送通道（160）。 放置在基座上的外周环（146），所以优选使用居中晶片，是热从基座分离所以没有它的温度保持比晶片的低得多。 尽管它的热隔离，外围环电连接到所述基座，以防止电弧放电。 抽气通道衬有各种元件（166，167，170，172）其中一些是电浮置的，并且被设计成没有沉积在这些元素的导电材料不有害地影响用于处理晶片产生等离子体。

    CVD processing chamber
    8.
    发明公开
    CVD processing chamber 失效
    KammerfürCVD Behandlungen

    公开(公告)号：EP0714998A3

    公开(公告)日：1996-12-04

    申请号：EP95117865.6

    申请日：1995-11-13

    申请人： APPLIED MATERIALS, INC.

    发明人： Zhao, Jun ,  Cho, Tom ,  Dornfest, Charles ,  Wolff, Stefan ,  Fairbairn, Kevin ,  Guo, Xin Sheng ,  Schreiber, Alex ,  White, John M.

    IPC分类号： C23C16/44 ,  H01L21/00

    CPC分类号： C23C16/45502 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/463 ,  C30B25/02 ,  H01J37/32477 ,  H01J37/32724 ,  H01J37/32834 ,  H01J2237/022 ,  H01L21/68742 ,  H01L21/68785 ,  Y10S438/909

    摘要： A process chamber 133 is disclosed which provides a 360° circular gas/vacuum distribution over a substrate being processed. The substrate being processed is supported on a heated and optionally cooled pedestal assembly 135. The substrate faces a one-piece gas distribution faceplate 122 being connected to an RF power supply outside the vacuum environment of the processing chamber 133. A pumping channel view port is provided to verify and confirm instrumentation readings concerning the degree of surface deposition on process chamber internal surfaces 265. All process chamber wall surfaces 265 facing the region 141 where plasma will be present during processing (except the gas distribution faceplate) are ceramic 234, 236 and therefore highly resistant to corrosion. The pedestal 136, an un-anodized metal, is also covered with a loosely fitting ceramic surface having alignment features to maintain concentricity between the wafer support surface of the pedestal and the wafer being processed. A valve body 226 is contained within the wall of the processing chamber 133 helping to reduce the surface area available for condensation of volatile process gas constituents which condense or cool in vacuum passage surfaces and can contaminate the process chamber 133 if allowed to migrate back to it through the vacuum piping.

    摘要翻译： 公开了一种装置，其包括用于处理基板的真空处理室（133） 用于在所述真空处理室（133）中的衬底处理位置（141）处支撑衬底的衬底支撑件（135）; 用于向所述处理室（133）供应处理气体用于处理所述衬底的气体入口; 其中所述腔室（133）包括在所述内腔表面（265）中的与所述腔室（133）的壁中的真空管道（222）连通的一个或多个开口（131），所述真空管道（222）连接到 真空系统，其中所述内室表面（265）包括邻近所述衬底处理位置（141）的陶瓷衬里（234,236），以防止所述处理室（133）的与所述衬底加工位置相邻的所述主体（134）的周壁 处理位置（141）在处理期间直接暴露于存在于所述衬底处理位置（141）处的等离子体。