公开(公告)号：EP0855452A1

公开(公告)日：1998-07-29

申请号：EP98300508.3

申请日：1998-01-26

申请人： APPLIED MATERIALS, INC.

发明人： Zhao, Jun ,  Luo, Lee ,  Liang, Xiao Jin ,  Wang, Jia-Xiang ,  Wolff, Stefan ,  Sajoto, Talex

IPC分类号： C23C16/44 ,  C23C16/52

CPC分类号： H01J37/3244 ,  C23C16/4401 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/4586 ,  C23C16/52 ,  H01J37/32082 ,  H01J2237/2001 ,  H01J2237/3321

摘要： The disclosure relates to methods and apparatus for depositing titanium films in a CVD system (10) using a heater heated to at least about 400°C at a pressure of about 1-10 torr in the reactor chamber (30), introducing a reactant gas and source gas at a reactant source gas flow ratio of less than about 250:1, and applying RF energy from a supply (5) to form a plasma. The present invention provides deposition rates up to 200 Å/minute on semiconductor substrates (36) from a titanium tetrachloride source, according to specific embodiments.

摘要翻译： 本公开涉及在CVD系统（10）中使用在反应器室（30）中以约1-10托的压力加热至至少约400℃的加热器沉积钛膜的方法和装置，引入反应气体 和反应物源气体流量比小于约250:1的源气体，以及从电源（5）施加RF能量以形成等离子体。 根据具体实施方案，本发明在四氯化钛源的半导体衬底（36）上提供高达200安培斯/分钟的沉积速率。

公开(公告)号：EP0855452B1

公开(公告)日：2003-06-04

申请号：EP98300508.3

申请日：1998-01-26

申请人： APPLIED MATERIALS, INC.

发明人： Zhao, Jun ,  Luo, Lee ,  Liang, Xiao Jin ,  Wang, Jia-Xiang ,  Wolff, Stefan ,  Sajoto, Talex

IPC分类号： C23C16/44 ,  C23C16/52

CPC分类号： H01J37/3244 ,  C23C16/4401 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/4586 ,  C23C16/52 ,  H01J37/32082 ,  H01J2237/2001 ,  H01J2237/3321

公开(公告)号：EP0855735A3

公开(公告)日：2001-10-17

申请号：EP98300509.1

申请日：1998-01-26

申请人： APPLIED MATERIALS, INC.

发明人： Zhao, Jun ,  Luo, Lee ,  Liang, Xiao Jin ,  Wang, Jia-Xiang ,  Sajoto, Talex ,  Wolff, Stefan ,  Selyutin, Leonid ,  Sinha, Ashok

IPC分类号： H01J37/32 ,  C23C16/458 ,  C23C16/44 ,  C23C16/52

CPC分类号： H01J37/3244 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/4586 ,  C23C16/52 ,  H01J37/32082 ,  H01J2237/2001 ,  H01J2237/3321

摘要： The disclosure relates to an apparatus for depositing titanium films at rates up to 200 Å/minute on semiconductor substrates from a titanium tetrachloride source in a reactor chamber (30). In accordance with an embodiment of the invention, a ceramic heater assembly (33) with an integrated RF plane (103) for bottom powered RF capability allows PECVD deposition at a temperature of at least 40°C for more efficient plasma treatment. A thermal choke (123) isolates the heater from its support shaft (121) reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater.

摘要翻译： 本公开涉及到用于沉积的速率钛膜高达200埃/半导体衬底上，从在反应器腔室（30），一个四氯化钛源分钟。 在与本发明的实施方式雅舞蹈，陶瓷加热器组件（33），其具有集成的RF（103），用于底部供电射频能力允许在至少40℃下的更有效的等离子体处理计划的温度PECVD沉积。 热扼流器（123）从它的支撑轴（121）减少跨越加热器的热梯度，以减少破损的风险和提高加热器的温度均匀性隔离加热器。

公开(公告)号：EP0855735A2

公开(公告)日：1998-07-29

申请号：EP98300509.1

申请日：1998-01-26

申请人： APPLIED MATERIALS, INC.

发明人： Zhao, Jun ,  Luo, Lee ,  Liang, Xiao Jin ,  Wang, Jia-Xiang ,  Sajoto, Talex ,  Wolff, Stefan ,  Selyutin, Leonid ,  Sinha, Ashok

IPC分类号： H01J37/32

CPC分类号： H01J37/3244 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/4586 ,  C23C16/52 ,  H01J37/32082 ,  H01J2237/2001 ,  H01J2237/3321

摘要： The disclosure relates to an apparatus for depositing titanium films at rates up to 200 Å/minute on semiconductor substrates from a titanium tetrachloride source in a reactor chamber (30). In accordance with an embodiment of the invention, a ceramic heater assembly (33) with an integrated RF plane (103) for bottom powered RF capability allows PECVD deposition at a temperature of at least 40°C for more efficient plasma treatment. A thermal choke (123) isolates the heater from its support shaft (121) reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater.

公开(公告)号：EP0855453A1

公开(公告)日：1998-07-29

申请号：EP98300528.1

申请日：1998-01-26

申请人： APPLIED MATERIALS, INC.

发明人： Zhao, Jun ,  Luo, Lee ,  Wang, Jia-Xiang ,  Liang, Xiao ,  Wolff, Stefan ,  Sajoto, Talex ,  Chang, Mei ,  Smith, Paul

IPC分类号： C23C16/44 ,  C23C16/52

CPC分类号： H01J37/3244 ,  C23C16/4401 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/4586 ,  C23C16/52 ,  H01J37/32082 ,  H01J2237/2001 ,  H01J2237/3321 ,  Y10S438/905

摘要： The present invention provides methods and apparatus for cleaning unwanted metal deposits using a halogen-containing gas, such as a chlorine-containing gas in some embodiments, with RF energy at a temperature of at least 400°C to provide a plasma clean treatment. According to another embodiment, the present invention also provides a process of cleaning a deposition chamber (30) that includes steps of pressurizing the chamber to a first pressure with a non-reactive gas, reducing the first pressure to a cleaning process pressure, and flowing a reactive gas into the chamber at the cleaning process pressure such that the non-reactive gas outgasses from the interior space to minimise intrusion of the reactive gas into the interior space.

摘要翻译： 本发明提供了在一些实施例中使用含卤素气体（例如含氯气体）在至少400℃的温度下用RF能量清洁不需要的金属沉积物以提供等离子体清洁处理的方法和装置。 根据另一个实施例，本发明还提供一种清洁沉积室（30）的方法，该沉积室包括以下步骤：用非反应性气体将室加压至第一压力，将第一压力降低至清洗过程压力，并流动 在清洁过程压力下将反应性气体输入到室中，使得非反应性气体从内部空间排出，以最小化反应气体侵入内部空间。