发明公开
EP0933806A4 METHOD FOR CLEANING PLASMA TREATMENT DEVICE AND METHOD FOR PLASMA TREATMENT
失效
REINIGUNG EINES等离子体仪器在PLASMABEHANDLUNG
- 专利标题: METHOD FOR CLEANING PLASMA TREATMENT DEVICE AND METHOD FOR PLASMA TREATMENT
- 专利标题(中): REINIGUNG EINES等离子体仪器在PLASMABEHANDLUNG
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申请号: EP97912453申请日: 1997-11-13
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公开(公告)号: EP0933806A4公开(公告)日: 2003-01-22
- 发明人: AKAHORI TAKASHI , TOZAWA MASAKI , NAITO YOKO , NAKASE RISA , ISHIZUKA SHUICHI , SAITO MASAHIDE , HIRATA TADASHI
- 申请人: TOKYO ELECTRON LTD
- 专利权人: TOKYO ELECTRON LTD
- 当前专利权人: TOKYO ELECTRON LTD
- 优先权: JP32091096 1996-11-14; JP32091496 1996-11-14
- 主分类号: C23C16/44
- IPC分类号: C23C16/44 ; H01L21/314 ; C23C16/50 ; H01L21/3065 ; H01L21/31
摘要:
To shorten the time necessary for removing a carbon fluoride (CF) film adherent to the inside of a vacuum vessel, and to protect the surface of the mounting table during the cleaning. After a CF film is formed in, for example, a plasma treatment device, O2 gas as a cleaning gas is introduced into a vacuum vessel (2) to remove the CF film adherent to the inside of the vessel (2). In the cleaning, the O2 gas is converted to a plasma to yield active oxygen species, which physically or chemically cleave C-C bonds and C-F bonds on the surface of the CF film. The O2 gas permeates into the CF film through the cleaved sites and is then reacted with carbon of the CF film to yield CO2, which flies out. On the other hand, fluorine flies out as F2. Thus, the CF film is removed.
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