公开(公告)号：EP0933806A4

公开(公告)日：2003-01-22

申请号：EP97912453

申请日：1997-11-13

申请人： TOKYO ELECTRON LTD

发明人： AKAHORI TAKASHI ,  TOZAWA MASAKI ,  NAITO YOKO ,  NAKASE RISA ,  ISHIZUKA SHUICHI ,  SAITO MASAHIDE ,  HIRATA TADASHI

IPC分类号： C23C16/44 ,  H01L21/314 ,  C23C16/50 ,  H01L21/3065 ,  H01L21/31

CPC分类号： C23C16/4405

摘要： To shorten the time necessary for removing a carbon fluoride (CF) film adherent to the inside of a vacuum vessel, and to protect the surface of the mounting table during the cleaning. After a CF film is formed in, for example, a plasma treatment device, O2 gas as a cleaning gas is introduced into a vacuum vessel (2) to remove the CF film adherent to the inside of the vessel (2). In the cleaning, the O2 gas is converted to a plasma to yield active oxygen species, which physically or chemically cleave C-C bonds and C-F bonds on the surface of the CF film. The O2 gas permeates into the CF film through the cleaved sites and is then reacted with carbon of the CF film to yield CO2, which flies out. On the other hand, fluorine flies out as F2. Thus, the CF film is removed.

摘要翻译： 本发明的目的是缩短清洁附着在真空容器中的含氟碳膜所需的时间，并且在进行清洁时保护转台的表面。 在通过例如等离子体处理系统沉积CF膜之后，执行粘附在真空容器2中的CF膜的清洁。 在清洁中，产生了O 2气体的等离子体，并且CF膜表面上的C-C和C-F键被由等离子体产生的O的活性物质和化学切割。 在切割C-C和C-F键的地方，O 2气体渗透到CF膜中，与CF膜的C反应形成二氧化碳分散。 另一方面，F分散为F2。 因此，除去CF膜。