公开(公告)号：EP0933802A4

公开(公告)日：1999-10-27

申请号：EP97911513

申请日：1997-11-11

申请人： TOKYO ELECTRON LTD

发明人： AKAHORI TAKASHI ,  ISHIZUKA SHUICHI ,  ENDO SHUNICHI ,  AOKI TAKESHI ,  HIRATA TADASHI

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/311 ,  H01L21/314 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L21/31144 ,  H01L21/31138 ,  H01L21/76802 ,  H01L23/5226 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A process for the production of a semiconductor device, which enables the practical use of a carbon fluoride film (hereinafter referred to as "CF film") as the interlayer insulator film. The deposition of a conductive film such as a TiN film (41) on a CF film (4) and the patternwise deposition of a resist film (42) on the film (41) are conducted successively, followed by the etching of the TiN film (41) with BCl3 gas or the like. Although the subsequent irradiation of the resulting wafer with O2 plasma makes not only the CF film but also the resist film (42) etched chemically, predetermined holes can be formed by virtue of the action of the TiN film (41) as a mask. Then, wiring is formed of aluminum or the like on the surface of the CF film (4). The TiN film (41) is effective in making the wiring and the CF film (4) adhere tightly to each other and serves as a part of the wiring. An insulator film made of SiO2 or the like may be used as the mask instead of the conductive film.

摘要翻译： 本发明的目的是提供一种可以将含氟碳膜的层间绝缘膜实际应用的含氟碳膜（CF膜）的方法。 在CF膜4上形成导电膜例如TiN膜41.在其上形成抗蚀剂膜42的图案之后，用例如BCl 3气体蚀刻TiN膜41。 此后，当用O 2等离子体照射晶片的表面时，对CF膜进行化学蚀刻，并且还蚀刻抗蚀剂膜42。 然而，由于TiN膜41用作掩模，因此可以形成预定的孔。 尽管在CF膜4的表面上形成了铝等的互连层，但是TiN膜41用作将互连层粘附到CF膜4上并用作互连层的一部分的粘附层。 作为掩模，可以用SiO 2等的绝缘膜代替导电膜。

公开(公告)号：EP0933806A4

公开(公告)日：2003-01-22

申请号：EP97912453

申请日：1997-11-13

申请人： TOKYO ELECTRON LTD

发明人： AKAHORI TAKASHI ,  TOZAWA MASAKI ,  NAITO YOKO ,  NAKASE RISA ,  ISHIZUKA SHUICHI ,  SAITO MASAHIDE ,  HIRATA TADASHI

IPC分类号： C23C16/44 ,  H01L21/314 ,  C23C16/50 ,  H01L21/3065 ,  H01L21/31

CPC分类号： C23C16/4405

摘要： To shorten the time necessary for removing a carbon fluoride (CF) film adherent to the inside of a vacuum vessel, and to protect the surface of the mounting table during the cleaning. After a CF film is formed in, for example, a plasma treatment device, O2 gas as a cleaning gas is introduced into a vacuum vessel (2) to remove the CF film adherent to the inside of the vessel (2). In the cleaning, the O2 gas is converted to a plasma to yield active oxygen species, which physically or chemically cleave C-C bonds and C-F bonds on the surface of the CF film. The O2 gas permeates into the CF film through the cleaved sites and is then reacted with carbon of the CF film to yield CO2, which flies out. On the other hand, fluorine flies out as F2. Thus, the CF film is removed.

摘要翻译： 本发明的目的是缩短清洁附着在真空容器中的含氟碳膜所需的时间，并且在进行清洁时保护转台的表面。 在通过例如等离子体处理系统沉积CF膜之后，执行粘附在真空容器2中的CF膜的清洁。 在清洁中，产生了O 2气体的等离子体，并且CF膜表面上的C-C和C-F键被由等离子体产生的O的活性物质和化学切割。 在切割C-C和C-F键的地方，O 2气体渗透到CF膜中，与CF膜的C反应形成二氧化碳分散。 另一方面，F分散为F2。 因此，除去CF膜。

公开(公告)号：EP1126511A4

公开(公告)日：2003-05-28

申请号：EP99943359

申请日：1999-09-16

申请人： TOKYO ELECTRON LTD

发明人： ENDO SHUNICHI ,  HIRATA TADASHI

IPC分类号： H01L21/31 ,  C23C16/26 ,  H01L21/312 ,  H01L21/314 ,  H01L21/768

CPC分类号： H01L21/76837 ,  C23C16/26 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/3127

摘要： This invention is a method of: making a film-forming gas including a compound gas of carbon and fluorine into plasma in a vacuum container 2 including a stage 4 for an object to be processed 10; and applying a bias electric power to the stage 4 in order to draw ions in the plasma toward the object 10 while forming an insulation film consisting of a film of fluorine-added carbon onto the object 10 by the plasma. At first, a first electric power of the bias electric power is applied to the stage 4 and the compound gas of carbon and fluorine is introduced at a first flow rate to form the film of fluorine-added carbon onto the object 10. Then, a second electric power of the bias electric power smaller than the first electric power is applied to the stage 4 and the compound gas of carbon and fluorine is introduced at a second flow rate smaller than the first flow rate to form the film of fluorine-added carbon onto the object 10. According to the invention, in the case of filling up a concave portion having a high aspect ratio with a film of fluorine-added carbon, the film-forming process can be conducted while generating less voids with a raised throughput.