公开(公告)号：EP1039522A4

公开(公告)日：2004-08-25

申请号：EP98954752

申请日：1998-11-19

申请人： TOKYO ELECTRON LTD

发明人： ISHIZUKA SHUICHI

IPC分类号： C23C16/50 ,  B05D3/02 ,  B05D7/24 ,  G01Q30/08 ,  G01Q80/00 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/312 ,  H01L21/314 ,  C23C16/26

CPC分类号： B05D1/62 ,  B05D3/0254 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/31058 ,  H01L21/312 ,  H01L21/3127

摘要： In a case where a CF film is used as an interlayer dielectric film for a semiconductor device, when a wiring of W (tungsten) is formed, the CF film is heated to a temperature of, e.g., about 400 to 450 DEG C. At this time, F gases are desorbed from the CF film, so that there are various disadvantages due to the corrosion of the wiring and the decrease of film thickness. A CF gas and a hydrocarbon gas are used as thin film deposition gases. These gases are activated as plasma to deposit a CF film on a semiconductor wafer using active species thereof. Subsequently, before forming a wiring, annealing is carried out at a temperature of, e.g., 425 DEG C, for 10 minutes to 2 hours using N2, H2 or F2 gas as a process gas at a flow rate of 50 sccm SIMILAR 10 slm under a pressure of from 0.1 Pa to 1 MPa (from 0.1 Pa to 100 KPa in the case of H2 gas), to desorb F, CF, CF2 and CF3 from the CF film. Thermo stability is improved by the recombination of uncombined materials produced by the desorption.

公开(公告)号：EP1094505A4

公开(公告)日：2001-10-24

申请号：EP97913415

申请日：1997-11-20

申请人： TOKYO ELECTRON LTD

发明人： ISHIZUKA SHUICHI ,  AOKI TAKESHI

IPC分类号： H01L21/31 ,  H01J37/32 ,  C23C16/50 ,  C23F4/00 ,  H01L21/205 ,  H01L21/3065 ,  H05H1/46

CPC分类号： H01J37/32229 ,  H01J37/32192 ,  H01J37/32284

摘要： A plasma treating device which can generate uniform plasma over a wide area and can perform plasma treatment on a substrate (wafer W) to be treated with high in-plane uniformity. A transmissive window (23) for transmitting microwaves is provided in the ceiling section of a vacuum vessel (2) provided with a plasma chamber (21) and a film forming chamber (22) and a waveguide (4) for supplying microwaves of 2.45 GHz in frequency to the vacuum vessel (2) in a TM mode is provided on the window (23). The waveguide (4) is composed of a rectangular waveguide (41), a cylindrical waveguide (42) which works as a TM mode converter (42), and a conical waveguide (43) and the exit side of the waveguide (43) is connected to the upper surface of the window (23). When the microwaves are transmitted into the vessel (2) in the TM mode and, at the same time, a magnetic field is formed in the vessel (2) and the exit-side inside diameter ØA of the waveguide (43) is adjusted to 130-160 mm, the density of plasma in the plasma chamber (1) becomes uniform and plasma treatment can be performed on a wafer W having a size of, for example, 8 inches with high in-plane uniformity.

摘要翻译： 本发明提供一种等离子体处理装置，其能够在广阔的范围内生成均匀的等离子体，并且能够对面内均匀性高的被处理基板（晶圆W）进行等离子体处理。 在设置有等离子体室（21）和成膜室（22）的真空容器（2）的顶部中设置用于传输微波的透射窗（23），该透射窗（23）提供2.45GHz的微波 在窗口（23）上以TM模式向真空容器（2）施加频率。 波导（4）由矩形波导（41），作为TM模式转换器（42）的圆柱形波导（42）和圆锥形波导（43）构成，波导（43）的出射侧是 连接到窗口（23）的上表面。 当以TM模式将微波传送到容器（2）中时，同时在容器（2）中形成磁场，并且将波导（43）的出口侧内径ØA调整为 130-160mm，等离子体室（1）中的等离子体的密度变得均匀，并且可以在尺寸例如为8英寸的晶片W上进行等离子体处理，并且具有高的面内均匀性。

公开(公告)号：EP1154466A4

公开(公告)日：2003-08-27

申请号：EP00901898

申请日：2000-01-26

申请人： TOKYO ELECTRON LTD

发明人： AMANO HIDEAKI ,  ISHIZUKA SHUICHI ,  KOBAYASHI TAKASHI ,  TSUBOI KYO

IPC分类号： C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/511 ,  H01J37/32 ,  H01L21/00 ,  H01L21/205

CPC分类号： H01L21/67103 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/50 ,  C23C16/511 ,  H01J37/32192 ,  H01J2237/2001 ,  H01L21/67069

摘要： Temperature adjustment means is buried near the upper surface of a ring structure that has substantially the same height as a wafer stage and surrounds it. The temperature adjustment means is controlled by a temperature control unit (61) according to a recipe for the process conditions so that the temperature of the wafer surface and the upper surface of the ring structure may become uniform. This minimizes the difference between temperatures above the wafer and above the ring structure, resulting in uniform deposition of film.

摘要翻译： 温度调节装置被埋在围绕用于半导体晶片的台的环件的上部，并且具有与该台相同的高度。 温度调节装置由环状件温度控制器61根据用于设定工艺条件的配方以使得晶片的表面和环形部件的上表面的温度均匀的方式控制， 分别。 此时，晶片上方和环状构件的上表面之间的温度差变小，能够形成均匀性较高的膜。

公开(公告)号：EP0933802A4

公开(公告)日：1999-10-27

申请号：EP97911513

申请日：1997-11-11

申请人： TOKYO ELECTRON LTD

发明人： AKAHORI TAKASHI ,  ISHIZUKA SHUICHI ,  ENDO SHUNICHI ,  AOKI TAKESHI ,  HIRATA TADASHI

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/311 ,  H01L21/314 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L21/31144 ,  H01L21/31138 ,  H01L21/76802 ,  H01L23/5226 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A process for the production of a semiconductor device, which enables the practical use of a carbon fluoride film (hereinafter referred to as "CF film") as the interlayer insulator film. The deposition of a conductive film such as a TiN film (41) on a CF film (4) and the patternwise deposition of a resist film (42) on the film (41) are conducted successively, followed by the etching of the TiN film (41) with BCl3 gas or the like. Although the subsequent irradiation of the resulting wafer with O2 plasma makes not only the CF film but also the resist film (42) etched chemically, predetermined holes can be formed by virtue of the action of the TiN film (41) as a mask. Then, wiring is formed of aluminum or the like on the surface of the CF film (4). The TiN film (41) is effective in making the wiring and the CF film (4) adhere tightly to each other and serves as a part of the wiring. An insulator film made of SiO2 or the like may be used as the mask instead of the conductive film.

摘要翻译： 本发明的目的是提供一种可以将含氟碳膜的层间绝缘膜实际应用的含氟碳膜（CF膜）的方法。 在CF膜4上形成导电膜例如TiN膜41.在其上形成抗蚀剂膜42的图案之后，用例如BCl 3气体蚀刻TiN膜41。 此后，当用O 2等离子体照射晶片的表面时，对CF膜进行化学蚀刻，并且还蚀刻抗蚀剂膜42。 然而，由于TiN膜41用作掩模，因此可以形成预定的孔。 尽管在CF膜4的表面上形成了铝等的互连层，但是TiN膜41用作将互连层粘附到CF膜4上并用作互连层的一部分的粘附层。 作为掩模，可以用SiO 2等的绝缘膜代替导电膜。

公开(公告)号：EP1130639A4

公开(公告)日：2004-09-01

申请号：EP99949428

申请日：1999-10-26

申请人： TOKYO ELECTRON LTD

发明人： ISHIZUKA SHUICHI

IPC分类号： H01L21/3205 ,  H01L21/31 ,  H01L21/312 ,  H01L21/314 ,  H01L21/318 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L21/316

CPC分类号： H01L21/76802 ,  H01L21/02112 ,  H01L21/0212 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/3127 ,  H01L21/318 ,  H01L21/76801 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： When a semiconductor device using fluorine-containing carbon films (CF films) 21, 22, 23 as inter-layer dielectric films is fabricated using boron nitride films (BN films) as hard masks 31, 32, 33, total inter-wiring capacitance of the semiconductor device can be made low. After a first CF film 21 as an inter-layer dielectric film is stacked, a hard mask 31 composed of a BN film is stacked on the CF film 21, and thereafter selectively removed by etching to form a predetermined groove pattern. The CF film 21 is next etched by using the hard mask 31 as a mask to form grooves for forming wiring layers 51. Then, Cu is buried into the grooves to complete the semiconductor device. Since this semiconductor device uses the CF film and the BN film having low relative dielectric constants, the relative dielectric constant of the entire semiconductor device can be made low. As a result, its total inter-wiring capacitance can be made low as well.

公开(公告)号：EP0933806A4

公开(公告)日：2003-01-22

申请号：EP97912453

申请日：1997-11-13

申请人： TOKYO ELECTRON LTD

发明人： AKAHORI TAKASHI ,  TOZAWA MASAKI ,  NAITO YOKO ,  NAKASE RISA ,  ISHIZUKA SHUICHI ,  SAITO MASAHIDE ,  HIRATA TADASHI

IPC分类号： C23C16/44 ,  H01L21/314 ,  C23C16/50 ,  H01L21/3065 ,  H01L21/31

CPC分类号： C23C16/4405

摘要： To shorten the time necessary for removing a carbon fluoride (CF) film adherent to the inside of a vacuum vessel, and to protect the surface of the mounting table during the cleaning. After a CF film is formed in, for example, a plasma treatment device, O2 gas as a cleaning gas is introduced into a vacuum vessel (2) to remove the CF film adherent to the inside of the vessel (2). In the cleaning, the O2 gas is converted to a plasma to yield active oxygen species, which physically or chemically cleave C-C bonds and C-F bonds on the surface of the CF film. The O2 gas permeates into the CF film through the cleaved sites and is then reacted with carbon of the CF film to yield CO2, which flies out. On the other hand, fluorine flies out as F2. Thus, the CF film is removed.

摘要翻译： 本发明的目的是缩短清洁附着在真空容器中的含氟碳膜所需的时间，并且在进行清洁时保护转台的表面。 在通过例如等离子体处理系统沉积CF膜之后，执行粘附在真空容器2中的CF膜的清洁。 在清洁中，产生了O 2气体的等离子体，并且CF膜表面上的C-C和C-F键被由等离子体产生的O的活性物质和化学切割。 在切割C-C和C-F键的地方，O 2气体渗透到CF膜中，与CF膜的C反应形成二氧化碳分散。 另一方面，F分散为F2。 因此，除去CF膜。