发明授权
- 专利标题: Test method for writable nonvolatile semiconductor memory device
- 专利标题(中): 可编程非易失性半导体存储器件的测试方法
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申请号: EP99105448.7申请日: 1994-02-08
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公开(公告)号: EP0935256B1公开(公告)日: 2002-05-08
- 发明人: Kumakura, Sinsuke , Yamazaki, Hirokazu , Watanabe, Hisayoshi , Kasa, Yasushi
- 申请人: FUJITSU LIMITED
- 申请人地址: 1-1, Kamikodanaka 4-chome, Nakahara-ku Kawasaki-shi, Kanagawa 211-8588 JP
- 专利权人: FUJITSU LIMITED
- 当前专利权人: FUJITSU LIMITED
- 当前专利权人地址: 1-1, Kamikodanaka 4-chome, Nakahara-ku Kawasaki-shi, Kanagawa 211-8588 JP
- 代理机构: Stebbing, Timothy Charles
- 优先权: JP5713593 19930317
- 主分类号: G11C29/00
- IPC分类号: G11C29/00 ; H01L21/02
摘要:
An object of the present invention is to provide a semiconductor device that permits easy and efficient testing. A nonvolatile semiconductor memory comprises word lines WLi and bit lines BLi, a memory cell matrix 17 consisting of nonvolatile memory cells Cij, a sense amplifier 15, a write/erase timing circuit 9 for performing timing control necessary for write and erase operations, and a status register 2 for storing the operating state of the memory at the completion of the operation of the circuit 9, wherein there are provided, outside the address of the memory cell matrix 17, two kinds of dummy cells, D1, D2, D3,..., whose values are fixed to different values that induce different outputs from the sense amplifier 15. A pass condition or a fail condition is generated by accessing the dummy cells.
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