发明公开
- 专利标题： Nitride semiconductor device and its manufacturing method
- 专利标题（中）： 氮化物半导体器件及其制造方法
-
申请号： EP99117485.5申请日： 1999-09-10
-
公开(公告)号： EP0993048A2公开(公告)日： 2000-04-12
- 发明人: Ishida, Masahiro , Nakamura, Shinji , Orita, Kenji , Imafuji, Osamu , Yuri, Masaaki
- 申请人： Matsushita Electronics Corporation
- 申请人地址： 1-1, Saiwai-cho Takatsuki-shi, Osaka 569-1143 JP
- 专利权人： Matsushita Electronics Corporation
- 当前专利权人： Matsushita Electronics Corporation
- 当前专利权人地址： 1-1, Saiwai-cho Takatsuki-shi, Osaka 569-1143 JP
- 代理机构： Marx, Lothar, Dr.
- 优先权： JP25990798 19980914; JP13384499 19990514
- 主分类号： H01L29/04
- IPC分类号： H01L29/04
摘要：
A semiconductor device includes: a crystalline substrate including a primary surface and a crystal plane provided within the primary surface so as to have a surface orientation different from a surface orientation of the primary surface; a semiconductor layered structure grown over the crystalline substrate; and an active region provided at a portion in the semiconductor layer structure above the crystal plane.
公开/授权文献
- EP0993048B1 Nitride semiconductor device and its manufacturing method 公开/授权日：2002-11-06
信息查询
IPC分类:
