-
1.发明公开Semiconductor device, semiconductor substrate, and manufacture method 审中-公开Halbleitervorrichtung，Halbleitersubstrat和Herstellungsverfahren
公开(公告)号：EP1091422A2
公开(公告)日：2001-04-11
申请号：EP00121878.3
申请日：2000-10-06
CPC分类号： C30B25/183 , H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/02516 , H01L21/0254 , H01L33/025 , H01L33/20 , H01L33/32 , H01S5/0207 , H01S5/3201 , H01S5/3202 , H01S5/3203 , H01S5/32341
摘要： Disclosed is a semiconductor device which comprises a substrate in which surface is formed a depression having a closed figure when viewed from the substrate normal and a semiconductor layer which is formed on the surface of the substrate by crystal growth from at least an inside face of the depression.
摘要翻译： 公开了一种半导体器件，其包括其中表面形成有凹陷的基板或从基板法线观察时具有闭合图形的突起和通过从至少内部的晶体生长形成在基板的表面上的半导体层 凹凸面或投影面的外表面。
-
公开(公告)号：EP1045431A1
公开(公告)日：2000-10-18
申请号：EP00107908.6
申请日：2000-04-13
CPC分类号： H01L33/0075 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/02639 , H01L21/02661 , H01L21/02664 , H01L31/184 , H01L31/1852 , Y02E10/544 , Y02P70/521
摘要： The present invention provides a method for producing a group III nitride compound semiconductor substrate including: (a) forming a first semiconductor film over a substrate, the first semiconductor film made of a first group III nitride compound semiconductor and provided with a step; (b) forming a second semiconductor film made of a second group III nitride compound semiconductor having a different thermal expansion coefficient from that of the first group III nitride compound semiconductor on the first semiconductor film; and (c) cooling the substrate and separating the second semiconductor film from the first semiconductor film. Thus, a large-area group III nitride compound semiconductor substrate can be produced in high yields and with high reproducibility.
摘要翻译： 本发明提供一种III族氮化物化合物半导体衬底的制造方法，包括：（a）在衬底上形成第一半导体膜，所述第一半导体膜由第一III族氮化物化合物半导体制成，并具有步骤; （b）形成由第一半导体膜上的第一III族氮化物半导体的热膨胀系数不同的第二III族氮化物化合物半导体制成的第二半导体膜; 和（c）冷却基板并将第二半导体膜与第一半导体膜分离。 因此，可以以高产率和高重现性制造大面积III族氮化物化合物半导体衬底。
-
公开(公告)号：EP0993048A2
公开(公告)日：2000-04-12
申请号：EP99117485.5
申请日：1999-09-10
IPC分类号： H01L29/04
CPC分类号： H01L33/0075 , H01L21/0237 , H01L21/02389 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L29/045 , H01L29/2003 , H01L33/007 , H01L33/0079
摘要： A semiconductor device includes: a crystalline substrate including a primary surface and a crystal plane provided within the primary surface so as to have a surface orientation different from a surface orientation of the primary surface; a semiconductor layered structure grown over the crystalline substrate; and an active region provided at a portion in the semiconductor layer structure above the crystal plane.
摘要翻译： 一种半导体器件，包括：晶体衬底，包括主表面和设置在所述主表面内的晶面，以便具有不同于所述主表面的表面取向的表面取向; 在晶体衬底上生长的半导体分层结构; 以及设置在晶面上的半导体层结构中的一部分处的有源区。
-
公开(公告)号：EP0997996A3
公开(公告)日：2000-11-08
申请号：EP99120838.0
申请日：1999-10-25
发明人： Nakamura, Shinji , Yuri, Masaaki , Orita, Kenji
CPC分类号： H01L33/32 , H01L33/007 , H01S5/32341
摘要： A semiconductor device includes a substrate, a multi-layer structure provided on the substrate, a first-conductive-type etch stop layer of a III nitride provided on the multi-layer structure, and a second-conductive-type first semiconductor layer of a III nitride provided on the etch stop layer. A molar fraction of Al is lower in a composition of the III nitride included in the first semiconductor layer than in a composition of the III nitride included in the etch stop layer.
摘要翻译： 一种半导体器件，包括衬底，设置在衬底上的多层结构，设置在多层结构上的III族氮化物的第一导电型蚀刻停止层以及设置在衬底上的第二导电型第一半导体层 III族氮化物提供在蚀刻停止层上。 包含在第一半导体层中的III族氮化物的组成中的Al的摩尔分数低于包含在蚀刻停止层中的III族氮化物的组成中的Al的摩尔分数。
-
公开(公告)号：EP1032099A2
公开(公告)日：2000-08-30
申请号：EP00103996.5
申请日：2000-02-25
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/02381 , H01L21/0242 , H01L21/0245 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L33/0079 , H01S5/32341
摘要： A semiconductor device comprises a substrate having a first thermal expansion coefficient T1, a strain reducing layer formed on the substrate and having a second thermal expansion coefficient T2, and a semiconductor layer formed on the strain reducing layer, having a third thermal expansion coefficient T3, and made of a nitride compound represented by Al y Ga 1-y-z In z N (0 ≦ y ≦ 1, 0 ≦ z ≦ 1). The second thermal expansion coefficient T2 is lower than the first thermal expansion coefficient T1. The third thermal expansion coefficient T3 is lower than the first thermal expansion coefficient T1 and higher than the second thermal expansion coefficient T2.
摘要翻译： 一种半导体器件包括：具有第一热膨胀系数T 1的衬底，形成在衬底上并具有第二热膨胀系数T 2的应变减小层以及形成在应变减小层上的具有第三热膨胀系数T 3的半导体层， 并且由由AlyGa1-y-zInzN（0≤y≤1,0≤z≤1）表示的氮化合物制成。 第二热膨胀系数T2低于第一热膨胀系数T1。 第三热膨胀系数T3低于第一热膨胀系数T1并高于第二热膨胀系数T2。
-
公开(公告)号：EP1003227A2
公开(公告)日：2000-05-24
申请号：EP99120986.7
申请日：1999-11-04
发明人： Yuri, Masaaki , Imafuji, Osamu , Nakamura, Shinji , Orita, Kenji
IPC分类号： H01L33/00
CPC分类号： H01L33/0075
摘要： A semiconductor device includes a substrate formed of Al x Ga 1-x N (0
摘要翻译： 一种半导体器件包括由Al x Ga 1-x N（0
-
公开(公告)号：EP1003227A3
公开(公告)日：2000-08-30
申请号：EP99120986.7
申请日：1999-11-04
发明人： Yuri, Masaaki , Imafuji, Osamu , Nakamura, Shinji , Orita, Kenji
IPC分类号： H01L33/00
CPC分类号： H01L33/0075
摘要： A semiconductor device includes a substrate formed of Al x Ga 1-x N (0
-
公开(公告)号：EP0993048A3
公开(公告)日：2000-06-07
申请号：EP99117485.5
申请日：1999-09-10
CPC分类号： H01L33/0075 , H01L21/0237 , H01L21/02389 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L29/045 , H01L29/2003 , H01L33/007 , H01L33/0079
摘要： A semiconductor device includes: a crystalline substrate including a primary surface and a crystal plane provided within the primary surface so as to have a surface orientation different from a surface orientation of the primary surface; a semiconductor layered structure grown over the crystalline substrate; and an active region provided at a portion in the semiconductor layer structure above the crystal plane.
-
9.发明公开Semiconductor device and method for fabricating the same 有权Halbleiterlaservorrichtung und Herstellungsverfahren
公开(公告)号：EP0997996A2
公开(公告)日：2000-05-03
申请号：EP99120838.0
申请日：1999-10-25
发明人： Nakamura, Shinji , Yuri, Masaaki , Orita, Kenji
CPC分类号： H01L33/32 , H01L33/007 , H01S5/32341
摘要： A semiconductor device includes a substrate, a multi-layer structure provided on the substrate, a first-conductive-type etch stop layer of a III nitride provided on the multi-layer structure, and a second-conductive-type first semiconductor layer of a III nitride provided on the etch stop layer. A molar fraction of Al is lower in a composition of the III nitride included in the first semiconductor layer than in a composition of the III nitride included in the etch stop layer.
摘要翻译： 半导体器件包括衬底，设置在衬底上的多层结构，设置在多层结构上的III族氮化物的第一导电型蚀刻停止层和第二导电型第一半导体层， 提供在蚀刻停止层上的III族氮化物。 包含在第一半导体层中的III族氮化物的组成中Al的摩尔分数低于蚀刻停止层中包含的III族氮化物的组成。
-
公开(公告)号：EP0986151A3
公开(公告)日：2000-04-12
申请号：EP99117438.4
申请日：1999-09-08
IPC分类号： H01S5/24
CPC分类号： H01S5/2231 , H01S5/32341 , Y10S438/956
摘要： A semiconductor light emitting device of the present invention includes: a substrate; a light emitting layer; a semiconductor layer of a hexagonal first III-group nitride crystal; and a cladding layer of a second III-group nitride crystal. A stripe groove is provided in the semiconductor layer along a 〈1, 1, -2, 0〉 direction.
摘要翻译： 本发明的半导体发光器件包括：衬底; 发光层; 六方晶系第一III族氮化物晶体的半导体层; 以及第二III族氮化物晶体的包覆层。 沿着<1,1，-2,0>方向在半导体层中提供条纹沟槽。
-
-
-
-
-
-
-
-
-
搜索结果
11 条记录 (耗时 0.01 秒)
