发明公开
EP1196938A2 APPARATUS AND METHOD FOR EXPOSING A SUBSTRATE TO PLASMA RADICALS
审中-公开
设备和方法处理基材与等离子体原子团
- 专利标题： APPARATUS AND METHOD FOR EXPOSING A SUBSTRATE TO PLASMA RADICALS
- 专利标题（中）： 设备和方法处理基材与等离子体原子团
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申请号： EP00923564.9申请日： 2000-04-21
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公开(公告)号： EP1196938A2公开(公告)日： 2002-04-17
- 发明人: NOBLE, David, B. , JALLEPALLY, Ravi , D'ASTICI, Nathan , MINER, Gary , SAHIN, Turgut , XING, Guangcai , BHATNAGAR, Yashraj
- 申请人： Applied Materials, Inc.
- 申请人地址： 3050 Bowers Avenue Santa Clara,California 95054 US
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： 3050 Bowers Avenue Santa Clara,California 95054 US
- 代理机构： Bayliss, Geoffrey Cyril
- 优先权： US298064 19990422; US439476 19991112
- 国际公布： WO0065631 20001102
- 主分类号： H01J37/00
- IPC分类号： H01J37/00
摘要：
An apparatus and method for exposing a substrate to plasma including a first reaction chamber (300) adapted to generate a plasma comprising ions and radicals and a second reaction chamber (200) coupled to the first reaction chamber and adapted to house a substrate at (100). The second reaction chamber is coupled to the first reaction chamber by an inlet member (275) and radicals of the plasma flow through the inlet member into the second reaction chamber.
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