公开(公告)号：EP1196938A2

公开(公告)日：2002-04-17

申请号：EP00923564.9

申请日：2000-04-21

申请人： Applied Materials, Inc.

发明人： NOBLE, David, B. ,  JALLEPALLY, Ravi ,  D'ASTICI, Nathan ,  MINER, Gary ,  SAHIN, Turgut ,  XING, Guangcai ,  BHATNAGAR, Yashraj

IPC分类号： H01J37/00

CPC分类号： H01J37/32357 ,  C23C8/36 ,  C23C16/452 ,  H01J2237/3387

摘要： An apparatus and method for exposing a substrate to plasma including a first reaction chamber (300) adapted to generate a plasma comprising ions and radicals and a second reaction chamber (200) coupled to the first reaction chamber and adapted to house a substrate at (100). The second reaction chamber is coupled to the first reaction chamber by an inlet member (275) and radicals of the plasma flow through the inlet member into the second reaction chamber.

公开(公告)号：EP1905095A2

公开(公告)日：2008-04-02

申请号：EP06787115.2

申请日：2006-07-12

申请人： Applied Materials, Inc.

发明人： HUNG, Steven ,  MINER, Gary

IPC分类号： H01L29/76

CPC分类号： H01L21/28194 ,  H01L21/28088 ,  H01L21/28202 ,  H01L21/3141 ,  H01L21/823842 ,  H01L21/823857

摘要： Gate electrode structures used in field effect transistors and integrated circuits and methods of manufacture are disclosed. Improved work function and threshold modulation are provided by the methods and structures.

公开(公告)号：EP1597752A2

公开(公告)日：2005-11-23

申请号：EP04708266.4

申请日：2004-02-04

申请人： APPLIED MATERIALS, INC.

发明人： NARWANKAR, Pravin, K. ,  MINER, Gary ,  LEPERT, Araud

IPC分类号： H01L21/00

CPC分类号： H01L21/28185 ,  H01L21/3105 ,  H01L21/3144 ,  H01L29/518 ,  H01L29/66181

摘要： A method of forming a dielectric film that includes nitrogen. The method includes incorporating nitrogen into a dielectric film using a nitridation gas and a rapid thermal annealing process, wherein an ultra-low pressure of equal to or less than about 10 Torr is used for the rapid thermal annealing process.