专利检索 ap:("Applied Materials, Inc.") AND inv:"BHATNAGAR, Yashraj" 第 1 页

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发明公开
APPARATUS AND METHOD FOR EXPOSING A SUBSTRATE TO PLASMA RADICALS 审中-公开
标题翻译：设备和方法处理基材与等离子体原子团

公开(公告)号：EP1196938A2

公开(公告)日：2002-04-17

申请号：EP00923564.9

申请日：2000-04-21

申请人： Applied Materials, Inc.

发明人： NOBLE, David, B. , JALLEPALLY, Ravi , D'ASTICI, Nathan , MINER, Gary , SAHIN, Turgut , XING, Guangcai , BHATNAGAR, Yashraj

IPC分类号： H01J37/00

CPC分类号： H01J37/32357 , C23C8/36 , C23C16/452 , H01J2237/3387

摘要： An apparatus and method for exposing a substrate to plasma including a first reaction chamber (300) adapted to generate a plasma comprising ions and radicals and a second reaction chamber (200) coupled to the first reaction chamber and adapted to house a substrate at (100). The second reaction chamber is coupled to the first reaction chamber by an inlet member (275) and radicals of the plasma flow through the inlet member into the second reaction chamber.