发明公开
EP1227171A1 Method for heating a wafer 有权
Verfahren zumErwärmenvonPlättchen

Method for heating a wafer
摘要:
A method is provided for preparing a substrate for processing in a chamber that has a substrate receiving portion. The substrate is positioned within the chamber in a location not on the substrate receiving portion. A gaseous flow is provided to the chamber, from which a plasma is struck to heat the substrate. After the substrate has been heated, it is moved to the substrate receiving portion for processing.
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