公开(公告)号：EP4460215A1

公开(公告)日：2024-11-13

申请号：EP23703789.0

申请日：2023-02-09

申请人： IHI Hauzer Techno Coating B.V.

发明人： IMMICH, Philipp ,  DOERWALD, Dave ,  JACOBS, Ruud ,  FRANSEN, Geert-Jan ,  GELTEN, Marijn ,  WEMMENHOVE, Jan ,  SONG, Xiaowei

IPC分类号： A47J27/00 ,  A47J36/02 ,  B21D51/22 ,  C23C14/50 ,  C23C14/02 ,  C23C14/06 ,  C23C14/56

公开(公告)号：EP4407065A1

公开(公告)日：2024-07-31

申请号：EP23153748.1

申请日：2023-01-27

申请人： Epinovatech AB

发明人： OLSSON, Martin Andreas

IPC分类号： C23C14/00 ,  C23C14/02 ,  C23C14/06 ,  H01L33/00 ,  C30B25/06 ,  C30B25/18

CPC分类号： C23C14/0036 ,  C23C14/024 ,  C23C14/0617 ,  C23C14/021 ,  C23C14/022 ,  C30B25/06 ,  C30B25/183 ,  C23C14/35 ,  C23C14/345 ,  C30B29/403

摘要： The present invention relates to a method for depositing AIN on a silicon substrate arranged in a process chamber. The method comprises: arranging an aluminum target in said process chamber; providing a process gas composition comprising a noble gas and nitrogen to said process chamber; ionizing said process gas composition by providing an electric field and a magnetic field such that a getter of noble gas ions and nitrogen ions is formed; sputtering said aluminum target while applying a positive bias on the silicon substrate; and depositing an epilayer of aluminum and nitrogen on the silicon substrate. The present invention further relates to a gallium nitride semiconductor transition layer structure comprising a AIN epilayer obtained by the method.

公开(公告)号：EP3670042B1

公开(公告)日：2024-07-24

申请号：EP17921503.3

申请日：2017-11-30

IPC分类号： B23B27/14 ,  C23C14/06 ,  B23B51/00 ,  B23C5/16 ,  B23D43/00 ,  B23D77/00 ,  B23F21/00 ,  C23C30/00 ,  C23C14/00 ,  C23C14/02 ,  C23C14/34

CPC分类号： B23B51/00 ,  C23C14/3464 ,  C23C14/0641 ,  C23C14/0036 ,  C23C30/005 ,  C23C14/3492 ,  C23C14/3485

公开(公告)号：EP3421642B1

公开(公告)日：2024-07-24

申请号：EP18179117.9

申请日：2018-06-21

IPC分类号： C23C28/04 ,  C23C14/00 ,  C23C14/02 ,  C23C14/06 ,  C23C14/32 ,  C23C30/00

CPC分类号： C23C14/0021 ,  C23C14/022 ,  C23C14/325 ,  C23C28/044 ,  C23C30/005 ,  C23C14/0641

公开(公告)号：EP4377490A1

公开(公告)日：2024-06-05

申请号：EP22773750.9

申请日：2022-08-30

申请人： HYDROMECANIQUE ET FROTTEMENT

发明人： LEROY, Marie-Alix ,  OUGIER, Michaël

IPC分类号： C23C14/06 ,  C23C14/34 ,  C23C14/35 ,  C23C14/02 ,  H01M4/66 ,  H01M8/0228 ,  H01M8/0206

CPC分类号： C23C14/3442 ,  C23C14/345 ,  C23C14/35 ,  C23C14/0605 ,  H01M4/663 ,  H01M4/667 ,  H01M8/0206 ,  H01M8/0228 ,  C23C14/025 ,  C23C14/354

公开(公告)号：EP4367282A1

公开(公告)日：2024-05-15

申请号：EP22747643.9

申请日：2022-07-06

申请人： Lion Alternative Energy PLC

发明人： LIAPIS, Kostas

IPC分类号： C23C14/02 ,  C23C14/06 ,  C23C14/22 ,  C23C14/32 ,  H01J37/32

CPC分类号： C23C14/025 ,  C23C14/0605 ,  C23C14/221 ,  C23C14/325

公开(公告)号：EP4347913A2

公开(公告)日：2024-04-10

申请号：EP22840499.2

申请日：2022-05-21

申请人： Westinghouse Electric Company LLC

发明人： LAHODA%2C%20Edward%20J. ,  MAIER, Benjamin R. ,  JAWORSKI, Allan W. ,  WRIGHT, Jonathan ,  WALTERS, Jorie L. ,  TERRY%2C%20Robert%20A.

IPC分类号： C23C14/32 ,  C23C14/16 ,  C23C14/02 ,  G21C3/07 ,  G21C21/02

公开(公告)号：EP4306679A3

公开(公告)日：2024-04-03

申请号：EP23211620.2

申请日：2019-06-25

申请人： Vapor Technologies, Inc.

发明人： Anton, Randolph Bryce ,  Peterson, Nicholas

IPC分类号： C23C14/00 ,  C23C14/02 ,  C23C14/06 ,  C23C14/16 ,  C23C14/20 ,  C23C14/32 ,  C23C14/35 ,  C23C28/00 ,  C23C28/02 ,  C23C30/00 ,  A01N59/20

摘要： The invention provides a coated substrate comprising: a substrate; and a blended zirconium copper alloy layer disposed over the substrate.

公开(公告)号：EP4323562A1

公开(公告)日：2024-02-21

申请号：EP22715134.7

申请日：2022-03-21

申请人： HYDROMECANIQUE ET FROTTEMENT

发明人： HEAU, Christophe ,  VILLARD, Maxime

IPC分类号： C23C14/00 ,  C23C14/02 ,  C23C14/06 ,  C23C14/16 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54 ,  G21C3/07 ,  G21C21/02 ,  H01J37/32 ,  H01J37/34

公开(公告)号：EP4317523A1

公开(公告)日：2024-02-07

申请号：EP23736964.0

申请日：2023-01-01

申请人： Chongqing Jimat New Material Technology Co., Ltd.

发明人： ZANG, Shiwei

IPC分类号： C23C14/24 ,  C23C14/02 ,  C23C14/26 ,  C23C14/56 ,  B05C9/06 ,  B65H18/10

摘要： The present disclosure provides a method, device, and system for manufacturing a composite metal foil. The device includes: a first-time double-sided coating module and a second-time double-sided coating module that are arranged at an interval, where the first-time double-sided coating module includes: a first vapor deposition column and a second vapor deposition column that are arranged oppositely, and an unwinding roller, a first evaporation source, a first set of over rollers, a second evaporation source, and a second set of over rollers that are arranged sequentially from bottom to top on opposite surfaces of the first vapor deposition column and the second vapor deposition column; and the second-time double-sided coating module includes: a third vapor deposition column, and a first set of cooling rollers, a third evaporation source, a second set of cooling rollers, a fourth evaporation source, and a winding roller that are arranged sequentially from top to bottom on the third vapor deposition column. The sequential arrangement of the two evaporation sources and corresponding rollers from bottom to top on the opposite surfaces of the first vapor deposition column and the second vapor deposition column allows first-time double-sided coating, and the sequential arrangement of the two evaporation sources and corresponding rollers from top to bottom on the third vapor deposition column allows second-time double-sided coating, which can improve the site utilization and the film production efficiency.