The invention relates to a method for the deposition of, in particular crystalline layers on a substrate lying on rotating substrate holders (2) in a process chamber (1). The substrate holders (2) are arranged around the centre of a rotating substrate holder support. Said substrate holder support (3) forms a process chamber base (4) together with the substrate holders (2), which is opposite a process chamber cover (5) with a central gas inlet device (6), through which, together with a carrier gas, one or several gaseous starting materials may be introduced into a decomposition zone, arranged above a heated central region (4') of the process chamber floor (4), surrounded by a diffusion zone (4''), from which the decomposition products are transported radially outwards in the carrier gas stream to the substrate. According to the invention, the supply of decomposition products to the substrate may be equilibrated, whereby the central region (4') of the process chamber base (4) is rotated relative to the substrate holder support (3) and to the process chamber cover (5) or the gas inlet device (6).