公开(公告)号：EP2126161B1

公开(公告)日：2011-01-12

申请号：EP08709150.0

申请日：2008-02-21

申请人： AIXTRON AG

发明人： KÄPPELER, Johannes ,  SCHMITZ, Dietmar

IPC分类号： C30B25/10 ,  C30B29/40 ,  C30B29/48 ,  C23C16/46

CPC分类号： C30B25/10 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/463 ,  C30B29/40 ,  C30B29/403 ,  C30B29/48

摘要： The invention relates to a device for depositing one or more layers, in particular crystalline layers, on one or more substrates, in particular crystalline substrates (6), which are situated on a susceptor (3) in a process chamber (2) of a reactor (1). A process chamber wall (4) that can be actively heated by a process chamber heating unit (11) lies opposite the susceptor (3) that can be actively heated by the susceptor heating unit (11). The device is provided with a gas inlet organ (7) for introducing process gases into the process chamber and the process chamber heating unit (11) has a coolant channel (13) and is situated at a distance from the exterior (18) of the process chamber wall (4) during the active heating of the latter (4). The aim of the invention is to also allow the device to be used with hybrid technology. To achieve this, the process chamber wall (4) can be selectively actively heated and also actively cooled, the coolant channel (13) acting as a cooling unit (12) for the process chamber wall. The distance between the cooling unit (12) for the process chamber wall and said wall (4) can be altered from heating position that is at a distance to a cooling position by means of a displacement unit, which is in particular designed as a lifting unit.

公开(公告)号：EP1831437B1

公开(公告)日：2010-04-21

申请号：EP05815830.4

申请日：2005-12-12

申请人： AIXTRON AG

发明人： KÄPPELER, Johannes ,  WISCHMEYER, Frank

IPC分类号： C30B25/10 ,  C23C16/46

CPC分类号： C23C16/46 ,  C30B25/10

公开(公告)号：EP2122656A1

公开(公告)日：2009-11-25

申请号：EP08717601.2

申请日：2008-03-11

申请人： AIXTRON AG

发明人： TEO, Kenneth B. K. ,  RUPESINGHE, Nalin L.

IPC分类号： H01J37/32

CPC分类号： H01J37/32568 ,  H01J37/32009 ,  H01J37/3244

摘要： A plasma system for substrate processing comprising, a conducting electrode (b,bb) on which one or more substrates (d) can be held; a second conducting electrode (a) placed adjacent but separated from the substrate holding electrode on the side away from the side where the substrates are held; and a gas mixture distribution shower head (e) placed away from the conducting electrode on the side where the substrates are held for supplying the gas mixture (f) needed for processing the substrates in a uniform manner; such that a plasma configuration initiated and established, between the con- ducting electrode holding the substrates and the second conducting electrode envelops the electrode holding the substrate, is kept away from the shower head activating and distributing the gas mixture through orifices (ee) in the shower head, there by providing advantages of uniformity, yield and reliability of process.

公开(公告)号：EP1861520B1

公开(公告)日：2009-08-12

申请号：EP06724824.5

申请日：2006-01-05

申请人： AIXTRON AG

发明人： REINHOLD, Markus ,  BAUMANN, Peter

IPC分类号： C23C16/455

CPC分类号： C23C16/45565 ,  C23C16/455 ,  C23C16/45512

摘要： The invention relates to a gas inlet element (2) for a CVD reactor with a chamber (4), which has a multitude of bottom-side outlet openings (23), via which a process gas introduced into the chamber (4) via edge-side access openings (10) exits into a process chamber (21) of the CVD reactor (1). In order to homogenize the gas composition, the invention provides that at least one mixing chamber arrangement (11, 12, 13) is situated upstream from the access openings (10), and at least two process gases are mixed with one another inside this mixing chamber arrangement.

公开(公告)号：EP2009714A2

公开(公告)日：2008-12-31

申请号：EP08159270.1

申请日：2008-06-27

申请人： Aixtron AG

发明人： Kalisch, Holger

IPC分类号： H01L51/52 ,  H01L51/56

CPC分类号： H01L51/0008 ,  B05D1/60 ,  B05D1/62 ,  B82Y10/00 ,  C23C14/12 ,  C23C14/228 ,  C23C14/32 ,  H01L51/002 ,  H01L51/0046 ,  H01L51/006 ,  H01L51/0081 ,  H01L51/0091 ,  H01L51/0558 ,  H01L51/42 ,  H01L51/5052 ,  H01L51/56 ,  Y02E10/549

摘要： Die Erfindung betrifft ein Verfahren zum Herstellen insbesondere dotierter Schichten für elektronische, lumineszierende oder photovoltaische Bauelemente, insbesondere OLEDs, wobei ein oder mehrere flüssige oder feste Ausgangsstoffe in einer Quelle (11, 12, 13, 14) verdampfen oder als Aerosol einem Trägergas beigemischt werden und in dieser Form in eine Depositionskammer (1) transportiert werden, wo sie insbesondere in Folge eines Temperaturgradienten eine dotierte Matrix bildend auf einem Substrat (5) kondensieren. Zur Verbesserung der Dotierung von elektronischen, lumineszierenden oder photovoltaischen Schichten, wird vorgeschlagen, dass die Dotierung durch Modifikation eines Ausgangsstoffes während seines Transports erfolgt.

摘要翻译： 用于制造电子，发光或光生伏打组件的掺杂层的方法，E.G. 有机发光二极管，包括蒸发液体或固体原料在源或混合材料用作气溶胶的载气，然后输送该材料进入沉积腔室（1）。 的材料作为凝结在基板的温度梯度形成掺杂的基质，其中所述掺杂其运输过程中发生由原料的修饰的结果。 起始材料不发展不加修改的掺杂效果。 用于制造电子，发光或光生伏打组件的掺杂层的方法，E.G. 有机发光二极管，包括蒸发液体或固体原料在源或混合材料用作气溶胶的载气，然后输送该材料进入沉积腔室（1）。 的材料作为凝结在基板的温度梯度形成掺杂的基质，其中所述掺杂其运输过程中发生由原料的修饰的结果。 起始材料不发展不加修改的掺杂效果。 起始原料的的修改发生在载气存在下的底物离开，并采取了修改腔室（21，22，23，24），其设置在所述源的下游和沉积室的上游的地方。 所述修饰是一个分子变化，所有这些都通过能量和/或物理或化学反应伙伴的供给而引起的。 的能量是通过等离子体，射频（RF）激励或热，其中通过直流电流（DC）电压的等离子体发生器或到交流（AC）电压的等离子体发生器产生的等离子体提供。 掺杂或掺杂剂通过形成基质的原料改性生成。 由修改产生的离子的动能通过静电场的影响。 由修改形成的掺杂剂包括中性基。 的掺杂剂的前体转化为在该变形室中的掺杂剂。 层的生长是由开始之前进入沉积室中，其中起始材料是由等离子体分解材料的击穿影响。 通过激活和停用的能源供应E.G. 等离子体，该层生长停止和启动。 一个独立的claimsoft被包括为用于沉积掺杂层为有机发光二极管的装置。

公开(公告)号：EP1948845A1

公开(公告)日：2008-07-30

申请号：EP06830031.8

申请日：2006-11-17

申请人： Aixtron AG

发明人： FRANKEN, Walter ,  KÄPPELER, Johannes

IPC分类号： C23C16/458

CPC分类号： C23C16/4584

摘要： The invention relates to a device for depositing at least one layer on a substrate having one or more susceptors (7) for receiving substrates, comprising a substrate holder (6) that can be rotatably driven and forms the bottom of a process chamber (2), a RF heating system (22) disposed below the susceptor holder (6) and a gas inlet element (4) for introducing process gases into the process chamber. In order to further develop the generic device and to improve the production and advantages of use, it is proposed that the susceptor holder (6) lies in a sliding manner on an essentially IR- and/or RF-permeable supporting plate (14).

公开(公告)号：EP1831422A2

公开(公告)日：2007-09-12

申请号：EP05826360.9

申请日：2005-12-06

申请人： Aixtron AG

发明人： REINHOLD, Markus ,  STRAUCH, Gerhard, Karl

IPC分类号： C23C14/24

CPC分类号： C23C14/228 ,  C23C14/22 ,  C23C16/4481

摘要： The invention relates to a device for the tempered storage of a container (19) for receiving condensed materials that are transported out of the container (19) by evaporation by means of a carrier gas guided through the container. Said device comprises a housing (3) forming a chamber (25), the wall (3) of said housing being embodied in a heat-insulating manner, a passage (20, 21) in the housing wall (3) for a gas supply line or gas evacuation line (17, 18) to, or from, the container (19) arranged in the chamber (25), and a heating (16) or cooling system for tempering the chamber (25). The invention is characterised in that a gas flow producer (4) and the gas flow guiding means (5-10) guiding the gas flow produced by the gas flow producer (4) are provided in the chamber (25), the gas flow produced by the gas flow producer and formed by the gas flow guiding means (5-10) being heated by the heating system (16) and flowing alongside the container (19).

公开(公告)号：EP1774057A1

公开(公告)日：2007-04-18

申请号：EP05762972.7

申请日：2005-07-01

申请人： Aixtron AG

发明人： BAUMANN, Peter ,  STRYZEWSKI, Piotr ,  SCHUMACHER, Marcus ,  LINDNER, Johannes ,  KÜSTERS, Antonio, Mesquida

IPC分类号： C23C16/54

CPC分类号： C23C16/458 ,  B05C3/18 ,  B05D1/36 ,  C23C16/45551

摘要： The invention relates to a device for depositing at least one especially thin layer onto at least one substrate (9). Said device comprises a process chamber (1, 20, 11, 11', 40, 21), housed in a reactor housing (2) and comprising a movable susceptor (20) which carries the at least one substrate (9). A plurality of gas feed lines (24) run into said process chamber and feed different process gases which comprise coat-forming components. Said process gases can be fed to the process chamber in subsequent process steps, thereby depositing the coat-forming components onto the substrate (9). In order to increase the throughput of said method, the process chamber is provided with a plurality of separate deposition chambers (11, 11') into which different gas feed lines (24, 24') run, thereby feeding individual gas compositions. The substrate (9) can be fed to said chambers one after the other by moving the susceptor (20) and depositing different layers or layer components.

公开(公告)号：EP1639148A1

公开(公告)日：2006-03-29

申请号：EP04724026.2

申请日：2004-03-29

申请人： Aixtron AG

发明人： FRANKEN, Walter ,  STRAUCH, Gerhard, Karl

IPC分类号： C23C14/04 ,  G03F1/14 ,  H01L21/68

CPC分类号： H01L21/682 ,  C23C14/042 ,  G03F1/20

摘要： The invention relates to a device for removably fixing a mask (1) in the form of a rectangular frame, on the legs (2, 3) of which clamping means are provided for gripping the edge (1') of the mask (1). According to the invention, the clamping means comprise a plurality of individual spring elements (4) which grip closely adjacent points on the mask edge (1'). The individual spring elements (4) which are assigned to one leg (2, 3) of the frame and are embodied as leaf springs (4) that are interconnected in a comb-type manner can be moved from a fitting position in which the frame can be fitted with the mask (1) into a clamping position by means of a common auxiliary clamping member (5).

公开(公告)号：EP1343926B1

公开(公告)日：2005-04-27

申请号：EP01984799.5

申请日：2001-12-01

申请人： Aixtron AG

发明人： DAUELSBERG, Martin

IPC分类号： C30B25/14 ,  C23C16/44

CPC分类号： C23C16/45508 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/4584 ,  C30B25/14

摘要： The invention relates to a method and a device for depositing especially crystalline layers on especially crystalline substrates in a process chamber (1) of a reactor housing having a water-cooled wall (2). The floor (3) of said process chamber (1) is heated. At least one reaction gas as a process gas, and hydrogen as a carrier gas, are centrally introduced into the process chamber, and are extracted by a gas evacuation ring (5) surrounding the process chamber (1). A flush gas (7) flows between the cover of the reactor (6) and the cover of the process chamber (4). Said flush gas and the flush gas (8) which flushes the area (12) between the reactor wall (2) and the gas evacuation ring (5) are introduced into the outer region (1') of the process chamber (1), via a gap (9) between the cover of the reactor (4) and the gas evacuation ring (5) which can be lowered for loading the process chamber (1), in order to be sucked through the openings (11) in the gas evacuation ring (54) with the process gas (10). The gas which flushes the region (12) between the reactor wall (2) and the gas evacuation ring (5) is nitrogen or a mixture of hydrogen and nitrogen.