公开(公告)号：EP1320636B9

公开(公告)日：2004-10-13

申请号：EP01974282.4

申请日：2001-09-22

申请人： Aixtron AG

发明人： JÜRGENSEN, Holger ,  STRAUCH, Gerd ,  SCHWAMBERA, Markus

IPC分类号： C23C16/448 ,  C23C16/455

CPC分类号： C23C14/228 ,  C23C14/12 ,  C23C14/185 ,  C23C16/4402 ,  C23C16/4481 ,  Y10T117/1004 ,  Y10T117/1008

摘要： The invention relates to a method and a device for depositing especially, organic layers. In a heated reactor (1), a non-gaseous starting material (3) that is stored in a source (I) in the form of a container (2) is transported from said source (I) to a substrate (II) by a carrier gas (4) in gaseous form (5) and is deposited on said substrate (II). The rate of production of the gaseous starting material by the source is unpredictable due to a heat input that cannot be regulated in a reproducible manner and due to cooling resulting from the carrier gas. The invention therefor provides that the preheated (6) carrier gas (4) washes through the starting material (3) from bottom to top, the starting material being kept essentially isothermal in relation to the carrier gas by the heated (7) container walls (13).

摘要翻译： 本发明涉及用于沉积特别是有机层的方法和设备。 在加热的反应器（1）中，储存在容器（2）形式的源（I）中的非气态起始材料（3）通过以下方式从所述源（I）输送到基底 气态形式的载气（4）（5）并沉积在所述基底（II）上。 由于不能以可重复的方式调节的热量输入以及由于载气产生的冷却，热源导致的气态原料的产生速率是不可预测的。 本发明规定，预热的（6）载气（4）从底部到顶部通过起始材料（3）进行洗涤，起始材料通过加热的（7）容器壁相对于载气基本保持等温 13）。

公开(公告)号：EP1320636B1

公开(公告)日：2004-04-21

申请号：EP01974282.4

申请日：2001-09-22

申请人： Aixtron AG

发明人： JÜRGENSEN, Holger ,  STRAUCH, Gerd ,  SCHWAMBERA, Markus

IPC分类号： C23C16/448 ,  C23C16/455

CPC分类号： C23C14/228 ,  C23C14/12 ,  C23C14/185 ,  C23C16/4402 ,  C23C16/4481 ,  Y10T117/1004 ,  Y10T117/1008

摘要： The invention relates to a method and a device for depositing especially, organic layers. In a heated reactor (1), a non-gaseous starting material (3) that is stored in a source (I) in the form of a container (2) is transported from said source (I) to a substrate (II) by a carrier gas (4) in gaseous form (5) and is deposited on said substrate (II). The rate of production of the gaseous starting material by the source is unpredictable due to a heat input that cannot be regulated in a reproducible manner and due to cooling resulting from the carrier gas. The invention therefor provides that the preheated (6) carrier gas (4) washes through the starting material (3) from bottom to top, the starting material being kept essentially isothermal in relation to the carrier gas by the heated (7) container walls (13).

公开(公告)号：EP1404903B1

公开(公告)日：2006-03-29

申请号：EP02751008.0

申请日：2002-06-10

申请人： Aixtron AG

发明人： SCHWAMBERA, Markus ,  FRANKEN, Walter ,  STRAUCH, Gerd

IPC分类号： C30B25/12 ,  C23C16/458 ,  C30B25/14 ,  C23C16/455 ,  C30B25/02

CPC分类号： C23C16/45574 ,  C23C16/45563 ,  C23C16/4584 ,  C30B25/02 ,  C30B25/12 ,  C30B25/14

摘要： The invention relates to a method for the deposition of, in particular crystalline layers on a substrate lying on rotating substrate holders (2) in a process chamber (1). The substrate holders (2) are arranged around the centre of a rotating substrate holder support. Said substrate holder support (3) forms a process chamber base (4) together with the substrate holders (2), which is opposite a process chamber cover (5) with a central gas inlet device (6), through which, together with a carrier gas, one or several gaseous starting materials may be introduced into a decomposition zone, arranged above a heated central region (4') of the process chamber floor (4), surrounded by a diffusion zone (4''), from which the decomposition products are transported radially outwards in the carrier gas stream to the substrate. According to the invention, the supply of decomposition products to the substrate may be equilibrated, whereby the central region (4') of the process chamber base (4) is rotated relative to the substrate holder support (3) and to the process chamber cover (5) or the gas inlet device (6).

公开(公告)号：EP1404903A1

公开(公告)日：2004-04-07

申请号：EP02751008.0

申请日：2002-06-10

申请人： Aixtron AG

发明人： SCHWAMBERA, Markus ,  FRANKEN, Walter ,  STRAUCH, Gerd

IPC分类号： C30B25/12 ,  C23C16/458 ,  C30B25/14 ,  C23C16/455 ,  C30B25/02

CPC分类号： C23C16/45574 ,  C23C16/45563 ,  C23C16/4584 ,  C30B25/02 ,  C30B25/12 ,  C30B25/14

摘要： The invention relates to a method for the deposition of, in particular crystalline layers on a substrate lying on rotating substrate holders (2) in a process chamber (1). The substrate holders (2) are arranged around the centre of a rotating substrate holder support. Said substrate holder support (3) forms a process chamber base (4) together with the substrate holders (2), which is opposite a process chamber cover (5) with a central gas inlet device (6), through which, together with a carrier gas, one or several gaseous starting materials may be introduced into a decomposition zone, arranged above a heated central region (4') of the process chamber floor (4), surrounded by a diffusion zone (4''), from which the decomposition products are transported radially outwards in the carrier gas stream to the substrate. According to the invention, the supply of decomposition products to the substrate may be equilibrated, whereby the central region (4') of the process chamber base (4) is rotated relative to the substrate holder support (3) and to the process chamber cover (5) or the gas inlet device (6).

公开(公告)号：EP1320636A1

公开(公告)日：2003-06-25

申请号：EP01974282.4

申请日：2001-09-22

申请人： Aixtron AG

发明人： JÜRGENSEN, Holger ,  STRAUCH, Gerd ,  SCHWAMBERA, Markus

IPC分类号： C23C16/448 ,  C23C16/455

CPC分类号： C23C14/228 ,  C23C14/12 ,  C23C14/185 ,  C23C16/4402 ,  C23C16/4481 ,  Y10T117/1004 ,  Y10T117/1008

摘要： The invention relates to a method and a device for depositing especially, organic layers. In a heated reactor (1), a non-gaseous starting material (3) that is stored in a source (I) in the form of a container (2) is transported from said source (I) to a substrate (II) by a carrier gas (4) in gaseous form (5) and is deposited on said substrate (II). The rate of production of the gaseous starting material by the source is unpredictable due to a heat input that cannot be regulated in a reproducible manner and due to cooling resulting from the carrier gas. The invention therefor provides that the preheated (6) carrier gas (4) washes through the starting material (3) from bottom to top, the starting material being kept essentially isothermal in relation to the carrier gas by the heated (7) container walls (13).