发明公开
- 专利标题： Semiconductor memory device
- 专利标题（中）： Halbleiterspeicherschaltung
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申请号： EP05017186.7申请日： 1998-06-03
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公开(公告)号： EP1603136A2公开(公告)日： 2005-12-07
- 发明人: Fujioka, Shinya , Taguchi, Masao , Fujieda, Waichirou , Sato, Yasuharu , Susuki, Takaaki , Aikawa, Tadao , Nagasawa, Takayuki
- 申请人： FUJITSU LIMITED
- 申请人地址： 1-1, Kamikodanaka 4-chome, Nakahara-ku Kawasaki-shi, Kanagawa 211-8588 JP
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： 1-1, Kamikodanaka 4-chome, Nakahara-ku Kawasaki-shi, Kanagawa 211-8588 JP
- 代理机构： Wilding, Frances Ward
- 优先权： JP14540697 19970603; JP21504797 19970808; JP33273997 19971203
- 主分类号： G11C11/4091
- IPC分类号： G11C11/4091
摘要：
A semiconductor memory device comprising: a memory cell array block (150) including a plurality of sub memory cell array blocks (162); a sense amplifier column associated with said memory cell array block, the sense amplifier column including a plurality of sense amplifier blocks (164), each associated with corresponding sub memory cell array block; a column decoder receiving a column address to output a column block select signal; and a sense amplifier driving signal generating circuit for driving specified sense amplifier block among the plurality of sense amplifier blocks (164) in response to said column block select signal.
公开/授权文献
- EP1603136B1 Semiconductor memory device 公开/授权日：2013-10-23
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