The invention provides a method of bonding two substrates together during which the surfaces of said substrates are brought into contact with each other, comprising at least one step of cleaning the surface of one or both of the substrates to be bonded before their surfaces are brought into contact, characterized in that the cleaning step is carried out so that each cleaned surface is little roughened and in that the bonding is furthermore preceded by heating at least one substrate to be bonded, said heating being initiated before the surfaces of the substrates are brought into contact and extended at least until they have been brought into contact. The invention also relates to a method of forming a structure comprising a thin film of semiconductor material transferred from a donor substrate to a second substrate, the method comprising the co-implantation of two atomic species into the donor substrate so as to create a weakened zone forming the boundary of thin film to be transferred, and the bonding of said substrates together, characterized in that the two atomic species are implanted in such a way that their peaks are offset by less than 200 Å in the thickness of the donor substrate, and in that the bonding is carried out by the method described above.