公开(公告)号：EP2143137A1

公开(公告)日：2010-01-13

申请号：EP08735486.6

申请日：2008-03-26

申请人： S.O.I. TEC Silicon on Insulator Technologies

发明人： ALLIBERT, Frédéric ,  KERDILES, Sébastien

IPC分类号： H01L21/762 ,  H01L21/68

CPC分类号： H01L21/76254 ,  H01L24/27 ,  H01L24/33 ,  H01L2221/68318 ,  H01L2221/68368 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01058 ,  H01L2924/01061 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/3512 ,  H01L2924/00

摘要： The invention relates to a process for manufacturing a composite substrate comprising bonding a first substrate (10) onto a second semi-conducting substrate (30), characterised in that it includes, before bonding, the formation of a bonding layer (20) between the first and the second substrate, said bonding layer (20) comprising a plurality of islands (21) distributed over the surface of the first substrate (10) in a determined pattern and separated from one another by regions (22) of a different type, which are distributed in a complementary pattern, wherein said islands (21) are formed via a plasma treatment of the material of the first substrate (10).

公开(公告)号：EP2115768A1

公开(公告)日：2009-11-11

申请号：EP07847300.6

申请日：2007-11-23

申请人： S.O.I. TEC Silicon on Insulator Technologies

发明人： KERDILES, Sébastien ,  MICHEL, Willy ,  SCHWARZENBACH, Walter ,  DELPRAT, Daniel ,  BEN MOHAMED, Nadia

IPC分类号： H01L21/20

CPC分类号： H01L21/2007 ,  H01L21/02052

摘要： The invention provides a method of bonding two substrates together during which the surfaces of said substrates are brought into contact with each other, comprising at least one step of cleaning the surface of one or both of the substrates to be bonded before their surfaces are brought into contact, characterized in that the cleaning step is carried out so that each cleaned surface is little roughened and in that the bonding is furthermore preceded by heating at least one substrate to be bonded, said heating being initiated before the surfaces of the substrates are brought into contact and extended at least until they have been brought into contact. The invention also relates to a method of forming a structure comprising a thin film of semiconductor material transferred from a donor substrate to a second substrate, the method comprising the co-implantation of two atomic species into the donor substrate so as to create a weakened zone forming the boundary of thin film to be transferred, and the bonding of said substrates together, characterized in that the two atomic species are implanted in such a way that their peaks are offset by less than 200 Å in the thickness of the donor substrate, and in that the bonding is carried out by the method described above.

公开(公告)号：EP1661175A1

公开(公告)日：2006-05-31

申请号：EP04787275.9

申请日：2004-09-01

申请人： S.O.I. Tec Silicon on Insulator Technologies ,  COMMISSARIAT A L'ENERGIE ATOMIQUE

发明人： KERDILES, Sébastien ,  LETERTRE, Fabrice ,  MORICEAU, Hubert ,  MORALES, Christophe

IPC分类号： H01L21/762

CPC分类号： H01L21/02032 ,  H01L21/76254 ,  H01L21/76259 ,  H01L33/0079 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention relates to a method for producing a thin layer (104) on a final substrate (107) consisting in forming said semiconductor layer on an initial carrier (101), assembling said thin layer (104) and the final substrate (107) by metallic bonding, and in mechanically separating the initial carrier and the thin layer (107), thereby obtaining an intermediate substrate usable for producing different components such as electroluminescent diodes or laser diodes. The inventive method makes it possible to produce a thin layer on a final substrate from an initial substrate which is recyclable by non-destructive mechanical dismounting.