发明公开
- 专利标题： PROCESS FOR MANUFACTURING A COMPOSITE SUBSTRATE
- 专利标题（中）： 用于生产复合衬底
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申请号： EP08735486.6申请日： 2008-03-26
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公开(公告)号： EP2143137A1公开(公告)日： 2010-01-13
- 发明人: ALLIBERT, Frédéric , KERDILES, Sébastien
- 申请人： S.O.I. TEC Silicon on Insulator Technologies
- 申请人地址： Parc Technologique des Fontaines Chemin des Franques 38190 Bernin FR
- 专利权人： S.O.I. TEC Silicon on Insulator Technologies
- 当前专利权人： S.O.I. TEC Silicon on Insulator Technologies
- 当前专利权人地址： Parc Technologique des Fontaines Chemin des Franques 38190 Bernin FR
- 代理机构： Collin, Jérôme
- 优先权： FR0754077 20070328
- 国际公布： WO2008116879 20081002
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/68
摘要：
The invention relates to a process for manufacturing a composite substrate comprising bonding a first substrate (10) onto a second semi-conducting substrate (30), characterised in that it includes, before bonding, the formation of a bonding layer (20) between the first and the second substrate, said bonding layer (20) comprising a plurality of islands (21) distributed over the surface of the first substrate (10) in a determined pattern and separated from one another by regions (22) of a different type, which are distributed in a complementary pattern, wherein said islands (21) are formed via a plasma treatment of the material of the first substrate (10).
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