发明公开
- 专利标题： RELAXATION OF STRAINED LAYERS
- 专利标题（中）： 松弛应变层
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申请号： EP09777696.7申请日： 2009-08-06
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公开(公告)号： EP2324493A2公开(公告)日： 2011-05-25
- 发明人: LETERTRE, Fabrice , MAZURE, Carlos , KRAMES, Michael, R. , MCLAURIN, Melvin, B. , GARDNER, Nathan, F.
- 申请人： S.O.I.Tec Silicon on Insulator Technologies
- 申请人地址： Parc Technologique des Fontaines Chemin des Franques 38926 Bernin FR
- 专利权人： S.O.I.Tec Silicon on Insulator Technologies
- 当前专利权人： S.O.I.Tec Silicon on Insulator Technologies
- 当前专利权人地址： Parc Technologique des Fontaines Chemin des Franques 38926 Bernin FR
- 代理机构： Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät
- 优先权： EP08290757 20080806; EP09290577 20090721
- 国际公布： WO2010015401 20100211
- 主分类号： H01L21/324
- IPC分类号： H01L21/324 ; H01L21/20 ; H01L33/00
摘要：
The present invention relates to a method for relaxing a strained material layer, comprising depositing a first low-viscosity layer comprising a first compliant material on the strained material layer, depositing a second low-viscosity layer comprising a second compliant material on the strained material layer to form a first sandwiched structure and subjecting the first sandwiched structure to a heat treatment such that reflow of the first and the second low-viscosity layers is caused thereby at least partly relaxing the strained material layer.
公开/授权文献
- EP2324493B1 Relaxation of strained layers 公开/授权日：2014-05-07
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