发明公开
EP2434531A2 Metal-insulator-metal capacitor and method for manufacturing thereof
审中-公开
Metall-Isolier-Metall-Kondensator和Herstellungsverfahrendafür
- 专利标题： Metal-insulator-metal capacitor and method for manufacturing thereof
- 专利标题（中）： Metall-Isolier-Metall-Kondensator和Herstellungsverfahrendafür
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申请号： EP11182813.3申请日： 2011-09-26
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公开(公告)号： EP2434531A2公开(公告)日： 2012-03-28
- 发明人: Popovici, Mihaela Ioana , Swerts, Johan , Pawlak, Malgorzata , Tomida, Kazuyuki , Kim, Min-Soo , Kittl, Jorge , Van Elshocht, Sven
- 申请人： IMEC
- 申请人地址： Kapeldreef 75 3001 Leuven BE
- 专利权人： IMEC
- 当前专利权人： IMEC
- 当前专利权人地址： Kapeldreef 75 3001 Leuven BE
- 代理机构： Van Malderen, Joëlle
- 优先权： US481393P 20110502; EP10181359 20100928
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; C23C16/455 ; H01L49/02
摘要：
The present invention is related to a method for producing a stack of layers on a semiconductor substrate, the method comprising the steps of:
● providing a substrate,
● producing on said substrate a first conductive layer,
● by atomic layer deposition, producing a sub-stack of layers on said conductive layer, at least one of said layers of the sub-stack being a TiO 2 layer, the other layers of the sub-stack being layers of a dielectric material having a composition suitable to form a cubic perovskite phase upon crystallization of said sub-stack of layers,
The substrate including said sub-stack of layers is subjected to a heat treatment to thereby obtain a crystallized dielectric layer. A second conductive layer is produced before or after the heat treatment so as to obtain a metal-insulator-metal capacitor with improved characteristics as a consequence of the Ti02 layer being present in the sub-stack. Notably, in a MIM capacitor according to the invention, the k-value of the dielectric layer is between 50 and 100 and the EOT of the MIM capacitor is between 0.35nm and 0.55nm.
● providing a substrate,
● producing on said substrate a first conductive layer,
● by atomic layer deposition, producing a sub-stack of layers on said conductive layer, at least one of said layers of the sub-stack being a TiO 2 layer, the other layers of the sub-stack being layers of a dielectric material having a composition suitable to form a cubic perovskite phase upon crystallization of said sub-stack of layers,
The substrate including said sub-stack of layers is subjected to a heat treatment to thereby obtain a crystallized dielectric layer. A second conductive layer is produced before or after the heat treatment so as to obtain a metal-insulator-metal capacitor with improved characteristics as a consequence of the Ti02 layer being present in the sub-stack. Notably, in a MIM capacitor according to the invention, the k-value of the dielectric layer is between 50 and 100 and the EOT of the MIM capacitor is between 0.35nm and 0.55nm.
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