公开(公告)号：EP2434531A3

公开(公告)日：2015-06-10

申请号：EP11182813.3

申请日：2011-09-26

申请人： IMEC

发明人： Popovici, Mihaela Ioana ,  Swerts, Johan ,  Pawlak, Malgorzata ,  Tomida, Kazuyuki ,  Kim, Min-Soo ,  Kittl, Jorge ,  Van Elshocht, Sven

IPC分类号： H01L21/02 ,  C23C16/455 ,  H01L49/02 ,  C23C16/40

CPC分类号： H01L21/02356 ,  C23C16/409 ,  C23C16/45529 ,  H01L21/02197 ,  H01L21/0228 ,  H01L21/02304 ,  H01L28/56

摘要： The present invention is related to a method for producing a stack of layers on a semiconductor substrate, the method comprising the steps of:
● providing a substrate,
● producing on said substrate a first conductive layer,
● by atomic layer deposition, producing a sub-stack of layers on said conductive layer, at least one of said layers of the sub-stack being a TiO 2 layer, the other layers of the sub-stack being layers of a dielectric material having a composition suitable to form a cubic perovskite phase upon crystallization of said sub-stack of layers,

The substrate including said sub-stack of layers is subjected to a heat treatment to thereby obtain a crystallized dielectric layer. A second conductive layer is produced before or after the heat treatment so as to obtain a metal-insulator-metal capacitor with improved characteristics as a consequence of the Ti02 layer being present in the sub-stack. Notably, in a MIM capacitor according to the invention, the k-value of the dielectric layer is between 50 and 100 and the EOT of the MIM capacitor is between 0.35nm and 0.55nm.

公开(公告)号：EP2434529B1

公开(公告)日：2020-02-12

申请号：EP10181355.8

申请日：2010-09-28

申请人： IMEC VZW

发明人： Popovici, Mihaela Ioana ,  Swerts, Johan ,  Kittl, Jorge ,  Van Elshocht, Sven

IPC分类号： C23C16/40 ,  H01L21/314 ,  C23C16/455 ,  H01L21/02 ,  H01L49/02

公开(公告)号：EP2337064B1

公开(公告)日：2014-08-06

申请号：EP10193520.3

申请日：2010-12-02

申请人： IMEC

发明人： Adelmann, Christoph ,  Swerts, Johan ,  Van Elshocht, Sven ,  Kittl, Jorge

IPC分类号： H01L21/316 ,  H01L21/28 ,  H01L29/423 ,  H01L29/788 ,  H01L29/792 ,  H01L21/02

CPC分类号： H01L21/31691 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/02197 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/7881 ,  H01L29/792

公开(公告)号：EP2434531A2

公开(公告)日：2012-03-28

申请号：EP11182813.3

申请日：2011-09-26

申请人： IMEC

发明人： Popovici, Mihaela Ioana ,  Swerts, Johan ,  Pawlak, Malgorzata ,  Tomida, Kazuyuki ,  Kim, Min-Soo ,  Kittl, Jorge ,  Van Elshocht, Sven

IPC分类号： H01L21/02 ,  C23C16/455 ,  H01L49/02

CPC分类号： H01L21/02356 ,  C23C16/409 ,  C23C16/45529 ,  H01L21/02197 ,  H01L21/0228 ,  H01L21/02304 ,  H01L28/56

摘要： The present invention is related to a method for producing a stack of layers on a semiconductor substrate, the method comprising the steps of:
● providing a substrate,
● producing on said substrate a first conductive layer,
● by atomic layer deposition, producing a sub-stack of layers on said conductive layer, at least one of said layers of the sub-stack being a TiO 2 layer, the other layers of the sub-stack being layers of a dielectric material having a composition suitable to form a cubic perovskite phase upon crystallization of said sub-stack of layers,

The substrate including said sub-stack of layers is subjected to a heat treatment to thereby obtain a crystallized dielectric layer. A second conductive layer is produced before or after the heat treatment so as to obtain a metal-insulator-metal capacitor with improved characteristics as a consequence of the Ti02 layer being present in the sub-stack. Notably, in a MIM capacitor according to the invention, the k-value of the dielectric layer is between 50 and 100 and the EOT of the MIM capacitor is between 0.35nm and 0.55nm.

摘要翻译： 本发明涉及一种用于在半导体衬底上制备层叠层的方法，所述方法包括以下步骤： - 提供衬底， - 在所述衬底上产生第一导电层， - 通过原子层沉积， 在所述导电层上产生一层子层，所述子堆叠的至少一层是TiO 2层，所述子堆叠的其它层是具有适于形成 在所述子层叠层结晶时立方体的钙钛矿相进行热处理，从而得到包含所述层叠层的基板，从而得到结晶化的介电层。 在热处理之前或之后产生第二导电层，从而获得由于TiO 2层存在于子堆中而具有改进特性的金属 - 绝缘体 - 金属电容器。 值得注意的是，在根据本发明的MIM电容器中，电介质层的k值在50和100之间，MIM电容器的EOT在0.35nm和0.55nm之间。

公开(公告)号：EP2081232B1

公开(公告)日：2013-07-17

申请号：EP08153100.6

申请日：2008-03-20

申请人： IMEC

发明人： Govoreanu, Bogdan ,  De Gendt, Stefan ,  Van Elshocht, Sven ,  Schram, Tom

IPC分类号： H01L29/788 ,  H01L21/336 ,  H01L29/51

CPC分类号： H01L29/7881 ,  H01L29/513 ,  H01L29/66825

公开(公告)号：EP1944794A1

公开(公告)日：2008-07-16

申请号：EP07113225.2

申请日：2007-07-26

申请人： Interuniversitair Microelektronica Centrum (IMEC) ,  Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： De Gendt, Stefan ,  Schram, Tom ,  Adelmann, Christoph ,  Chang, Shih-Hsun ,  Van Elshocht, Sven ,  Ragnarsson, Lars-Ake

IPC分类号： H01L21/28 ,  H01L29/51

CPC分类号： H01L21/28176 ,  H01L21/28264 ,  H01L29/20 ,  H01L29/517

摘要： The present invention relates to semiconductor process technology and devices.
In particular, the present invention relates to a method for forming a gate stack in a MOSFET device and the MOSFET device obtainable by said method.

摘要翻译： 本发明涉及半导体工艺技术和器件。 特别地，本发明涉及在MOSFET器件中形成栅极叠层的方法以及通过所述方法获得的MOSFET器件。

公开(公告)号：EP2337064A3

公开(公告)日：2012-07-18

申请号：EP10193520.3

申请日：2010-12-02

申请人： IMEC

发明人： Adelmann, Christoph ,  Swerts, Johan ,  Van Elshocht, Sven ,  Kittl, Jorge

IPC分类号： H01L21/316 ,  H01L21/28 ,  H01L29/423 ,  H01L29/788 ,  H01L29/792 ,  H01L21/02

CPC分类号： H01L21/31691 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/02197 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/7881 ,  H01L29/792

摘要： The present invention is directed to rare-earth aluminate dielectric material and layer which are particularly suitable for non-volatile memory applications and in particular for integration in flash memory devices.

公开(公告)号：EP2434529A1

公开(公告)日：2012-03-28

申请号：EP10181355.8

申请日：2010-09-28

申请人： IMEC

发明人： Popovici, Mihaela Ioana ,  Swerts, Johan ,  Kittl, Jorge ,  Van Elshocht, Sven

IPC分类号： H01L21/02 ,  C23C16/40 ,  H01L21/314 ,  C23C16/455

摘要： The present invention is related to a method for producing a stack of layers on a semiconductor substrate (1), including a bottom metal layer (10), an intermediate dielectric layer (11) and a top metal layer (12). The stack is suitable for producing metal-insulator-metal capacitor structures. According to the preferred embodiment, the bottom metal layer is a ruthenium layer (10b) covered by a ruthenium oxide layer (10a) obtained through controlled oxidation of the Ru layer. According to the invention, the dielectric layer is obtained by first depositing a thin TiO 2 protection layer (11a) by atomic layer deposition using water as oxidant, followed by deposition of a second dielectric (11b) through ALD using O 3 as oxidant. Preferably the second dielectric is a TiO 2 layer in rutile phase. The thin protection layer protects the Ru from etching by O 3 , while allowing easily the formation of rutile phase TiO 2 . The invention also reveals a method for oxidizing a Ru layer in such a manner that the roughness of the Ru layer remains unchanged.

摘要翻译： 本发明涉及一种在包括底部金属层（10），中间电介质层（11）和顶部金属层（12）的半导体衬底（1）上制造层叠层的方法。 该堆叠适用于生产金属 - 绝缘体 - 金属电容器结构。 根据优选实施例，底部金属层是通过Ru层的受控氧化获得的氧化钌层（10a）覆盖的钌层（10b）。 根据本发明，通过使用水作为氧化剂通过原子层沉积首先沉积薄的TiO 2保护层（11a），然后通过使用O 3作为氧化剂的ALD沉积第二电介质（11b），获得电介质层。 优选地，第二电介质是金红石相中的TiO 2层。 薄的保护层保护Ru不被O 3蚀刻，同时容易地形成金红石相TiO 2。 本发明还揭示了使Ru层的粗糙度保持不变的方式来氧化Ru层。

公开(公告)号：EP2337064A2

公开(公告)日：2011-06-22

申请号：EP10193520.3

申请日：2010-12-02

申请人： IMEC

发明人： Adelmann, Christoph ,  Swerts, Johan ,  Van Elshocht, Sven ,  Kittl, Jorge

IPC分类号： H01L21/316

CPC分类号： H01L21/31691 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/02197 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/7881 ,  H01L29/792

摘要： The present invention is directed to rare-earth aluminate dielectric material and layer which are particularly suitable for non-volatile memory applications and in particular for integration in flash memory devices.

摘要翻译： 本发明涉及稀土铝酸盐介电材料和层，其特别适用于非易失性存储器应用，特别是用于集成闪存器件。