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    METHOD FOR PROTECTING A TOP SURFACE OF A LAYER IN A SEMICONDUCTOR STRUCTURE
    1.
    发明公开
    METHOD FOR PROTECTING A TOP SURFACE OF A LAYER IN A SEMICONDUCTOR STRUCTURE 有权
    EERER HALBLEITERSTRUKTUR VERFAHREN ZUM SCHUTZ EINER SCHICHTOBEEITE

    公开(公告)号：EP3073514A1

    公开(公告)日：2016-09-28

    申请号：EP15160520.1

    申请日：2015-03-24

    申请人： IMEC VZW

    发明人： Swerts, Johan ,  Mertens, Sofie

    IPC分类号： H01L21/285 ,  C23C14/34 ,  H01F41/18

    CPC分类号： H01L43/12 ,  H01F10/3286 ,  H01F41/18 ,  H01L21/2855 ,  H01L21/7685 ,  H01L21/76865 ,  H01L43/08 ,  H01L43/10

    摘要： The present invention relates to a method (500) for protecting a top surface (108) of a layer (104, 304) in a semiconductor structure (100, 200, 300, 400), the method (500) comprising: providing (502) a layer (104, 304) on a substrate (102), the layer (104, 304) having an initial thickness (to) and an initial composition (C 0 ), and a top surface (108), depositing (504) by means of physical vapor deposition, PVD, a sacrificial metal layer (106) on and in contact with the top surface (108), the sacrificial metal layer (106) comprising a light metal element, depositing (506) by means of physical vapor deposition a functional metal layer (110, 312) on and in contact with the sacrificial metal layer (106), whereby the sacrificial metal layer (106) is removed by sputtering during the deposition of the functional metal layer (110, 312) such that an interface (112) is formed between the top surface (108) and the functional metal layer (110, 312), the sacrificial metal layer (106) protecting the top surface (108) during the deposition of the functional metal layer (110, 312) such that, the layer (104, 304) has a final thickness (t f ) matching the initial thickness (to) and a final composition (C f ) corresponding to the initial composition (Co).

    摘要翻译： 本发明涉及一种用于保护半导体结构（100,200,300,400）中的层（104,304）的顶表面（108）的方法（500），所述方法（500）包括：提供（502 ）在衬底（102）上的层（104,304），所述层（104,304）具有初始厚度（初始厚度）和初始组成（C 0）以及顶表面（108），沉积（504） 通过物理气相沉积，PVD，在顶表面（108）上和与其接触的牺牲金属层（106），所述牺牲金属层（106）包括轻金属元件，通过物理蒸气沉积（506） 在牺牲金属层（106）上沉积功能性金属层（110,312）并且与牺牲金属层（106）接触，由此在功能金属层（110,312）的沉积期间通过溅射去除牺牲金属层（106），使得 在所述顶表面（108）和所述功能金属层（110,312）之间形成界面（112），所述牺牲金属层（106）保护t 在顶层表面（108）期间，在功能金属层（110,312）沉积期间，使得层（104,304）具有与初始厚度（to）和最终组成（C f）匹配的最终厚度（tf） ）对应于初始组成（Co）。

    Metal-insulator-metal capacitor and method for manufacturing thereof
    3.
    发明公开
    Metal-insulator-metal capacitor and method for manufacturing thereof 审中-公开
    金属 - 绝缘 - 金属电容器和其制造方法

    公开(公告)号：EP2434531A3

    公开(公告)日：2015-06-10

    申请号：EP11182813.3

    申请日：2011-09-26

    申请人： IMEC

    发明人： Popovici, Mihaela Ioana ,  Swerts, Johan ,  Pawlak, Malgorzata ,  Tomida, Kazuyuki ,  Kim, Min-Soo ,  Kittl, Jorge ,  Van Elshocht, Sven

    IPC分类号： H01L21/02 ,  C23C16/455 ,  H01L49/02 ,  C23C16/40

    CPC分类号： H01L21/02356 ,  C23C16/409 ,  C23C16/45529 ,  H01L21/02197 ,  H01L21/0228 ,  H01L21/02304 ,  H01L28/56

    摘要： The present invention is related to a method for producing a stack of layers on a semiconductor substrate, the method comprising the steps of:
    ● providing a substrate,
    ● producing on said substrate a first conductive layer,
    ● by atomic layer deposition, producing a sub-stack of layers on said conductive layer, at least one of said layers of the sub-stack being a TiO 2 layer, the other layers of the sub-stack being layers of a dielectric material having a composition suitable to form a cubic perovskite phase upon crystallization of said sub-stack of layers,

    The substrate including said sub-stack of layers is subjected to a heat treatment to thereby obtain a crystallized dielectric layer. A second conductive layer is produced before or after the heat treatment so as to obtain a metal-insulator-metal capacitor with improved characteristics as a consequence of the Ti02 layer being present in the sub-stack. Notably, in a MIM capacitor according to the invention, the k-value of the dielectric layer is between 50 and 100 and the EOT of the MIM capacitor is between 0.35nm and 0.55nm.

    Method of forming MIM capacitor with Ru-comprising oxygen diffusion barrier
    4.
    发明公开
    Method of forming MIM capacitor with Ru-comprising oxygen diffusion barrier 有权
    Verfahren zur Herstellung eines MIM Kondensators mit Ru-haltiger Sauerstoffdiffusionsbarriere

    公开(公告)号：EP2584588A1

    公开(公告)日：2013-04-24

    申请号：EP11186243.9

    申请日：2011-10-21

    申请人： IMEC

    发明人： Kim, Min-Soo ,  Caillat, Christian ,  Swerts, Johan

    IPC分类号： H01L21/02 ,  C07F15/00 ,  C23C16/06 ,  C23C16/40 ,  H01L21/285 ,  H01L21/768

    CPC分类号： H01L28/65 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/40 ,  H01L21/28562 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/7687 ,  H01L28/75 ,  H01L28/90

    摘要： A method for forming a MIM capacitor structure comprises the steps of:
    - obtaining a base structure provided with a recess, the recess exposing a conductive bottom electrode plug (33),
    - selectively growing Ru (40) on the bottom electrode plug, based on a difference in incubation time of Ru growth on the bottom electrode plug compared to the base structure material,
    - oxidizing the selectively grown Ru,
    - depositing a Ru-comprising bottom electrode (60) over the oxidized Ru (50),
    - forming a dielectric layer (70) on the Ru-comprising bottom electrode, and
    - forming a conductive top electrode (71) over the dielectric layer.

    摘要翻译： 一种用于形成MIM电容器结构的方法包括以下步骤： - 获得设置有凹部的基底结构，所述凹部暴露导电底部电极塞（33）， - 基于下部电极插塞选择性地生长Ru（40） 在底部电极插塞上的Ru生长与基础结构材料相比的温育时间的差异， - 氧化选择性生长的Ru， - 在氧化的Ru（50）上沉积包含Ru的底部电极（60）， - 形成电介质 （70），并且在所述电介质层上形成导电顶电极（71）。

    Metal-insulator-metal capacitor for use in semiconductor devices and manufacuring method therfor
    6.
    发明公开
    Metal-insulator-metal capacitor for use in semiconductor devices and manufacuring method therfor 审中-公开
    Metall-Isolator-Metall-Kondenstor zur Verwendung in Halbleitervorrichtungen und Herstellungsverfahrendafür

    公开(公告)号：EP2434529A1

    公开(公告)日：2012-03-28

    申请号：EP10181355.8

    申请日：2010-09-28

    申请人： IMEC

    发明人： Popovici, Mihaela Ioana ,  Swerts, Johan ,  Kittl, Jorge ,  Van Elshocht, Sven

    IPC分类号： H01L21/02 ,  C23C16/40 ,  H01L21/314 ,  C23C16/455

    摘要： The present invention is related to a method for producing a stack of layers on a semiconductor substrate (1), including a bottom metal layer (10), an intermediate dielectric layer (11) and a top metal layer (12). The stack is suitable for producing metal-insulator-metal capacitor structures. According to the preferred embodiment, the bottom metal layer is a ruthenium layer (10b) covered by a ruthenium oxide layer (10a) obtained through controlled oxidation of the Ru layer. According to the invention, the dielectric layer is obtained by first depositing a thin TiO 2 protection layer (11a) by atomic layer deposition using water as oxidant, followed by deposition of a second dielectric (11b) through ALD using O 3 as oxidant. Preferably the second dielectric is a TiO 2 layer in rutile phase. The thin protection layer protects the Ru from etching by O 3 , while allowing easily the formation of rutile phase TiO 2 . The invention also reveals a method for oxidizing a Ru layer in such a manner that the roughness of the Ru layer remains unchanged.

    摘要翻译： 本发明涉及一种在包括底部金属层（10），中间电介质层（11）和顶部金属层（12）的半导体衬底（1）上制造层叠层的方法。 该堆叠适用于生产金属 - 绝缘体 - 金属电容器结构。 根据优选实施例，底部金属层是通过Ru层的受控氧化获得的氧化钌层（10a）覆盖的钌层（10b）。 根据本发明，通过使用水作为氧化剂通过原子层沉积首先沉积薄的TiO 2保护层（11a），然后通过使用O 3作为氧化剂的ALD沉积第二电介质（11b），获得电介质层。 优选地，第二电介质是金红石相中的TiO 2层。 薄的保护层保护Ru不被O 3蚀刻，同时容易地形成金红石相TiO 2。 本发明还揭示了使Ru层的粗糙度保持不变的方式来氧化Ru层。