公开(公告)号：EP3282265B3

公开(公告)日：2024-03-27

申请号：EP16183640.8

申请日：2016-08-10

发明人： HEINRICH, Klaus ,  LIEBING, Hartmut ,  ROTH, Andreas ,  EISENBRANDT, Stefan ,  OTT, Andreas ,  BOURY, Bruno

IPC分类号： H01L49/02 ,  H01L29/06 ,  H01L29/78 ,  H01L29/8605 ,  G01R17/16 ,  G01R19/00 ,  H01L29/40

公开(公告)号：EP4327355A1

公开(公告)日：2024-02-28

申请号：EP22714122.3

申请日：2022-03-08

申请人： TDK Electronics AG

发明人： SHAYGANPOOR, Mehrdad ,  AFLENZER, Guenter ,  TOMASEVIC, Davor ,  FEICHTINGER, Thomas

IPC分类号： H01L21/683 ,  H01L21/78 ,  H01L23/31 ,  H01L23/00 ,  H01L49/02 ,  H01G4/00 ,  H01G4/228 ,  H01L21/56 ,  H01L29/861

公开(公告)号：EP4320634A1

公开(公告)日：2024-02-14

申请号：EP22706499.5

申请日：2022-02-08

申请人： QUALCOMM INCORPORATED

发明人： LI, Xia ,  YANG, Bin ,  YANG, Haining

IPC分类号： H01F17/00 ,  H01F41/04 ,  H01F27/28 ,  H01L49/02

公开(公告)号：EP4302339A1

公开(公告)日：2024-01-10

申请号：EP22712961.6

申请日：2022-03-03

申请人： DIAMFAB ,  Centre National de la Recherche Scientifique ,  Institut Polytechnique de Grenoble ,  UNIVERSITÉ GRENOBLE ALPES

发明人： CHICOT, Gauthier ,  DRICHE, Khaled ,  EON, David ,  GHEERAERT, Etienne ,  MASANTE, Cédric ,  PERNOT, Julien

IPC分类号： H01L49/02 ,  C23C16/27 ,  H01G4/008 ,  H01G4/08 ,  H01L29/92

公开(公告)号：EP4295392A1

公开(公告)日：2023-12-27

申请号：EP22712109.2

申请日：2022-02-16

申请人： Efficient Power Conversion Corporation

发明人： CAO, Jianjun ,  STECKLEIN, Gordon ,  SHARMA, Muskan

IPC分类号： H01L21/8252 ,  H01L27/06 ,  H01L49/02 ,  H01L29/40 ,  H01L29/778

公开(公告)号：EP4289003A1

公开(公告)日：2023-12-13

申请号：EP22705703.1

申请日：2022-01-31

申请人： QUALCOMM INCORPORATED

发明人： YUN, Changhan Hobie ,  KIM, Daniel Daeik ,  THADESAR, Paragkumar Ajaybhai ,  PARK, Nosun ,  VADHAVKAR, Sameer Sunil

IPC分类号： H01L25/065 ,  H01L25/16 ,  H01L49/02 ,  H01L23/31

公开(公告)号：EP4218052A1

公开(公告)日：2023-08-02

申请号：EP21873137.0

申请日：2021-08-06

申请人： INTEL Corporation

发明人： DUONG, Benjamin ,  GARELICK, Michael ,  GRUJICIC, Darko ,  IBRAHIM, Tarek ,  MARIN, Brandon C. ,  VADLAMANI, Sai ,  WALL, Marcel

IPC分类号： H01L23/64 ,  H05K1/02 ,  H01L49/02

公开(公告)号：EP4194591A1

公开(公告)日：2023-06-14

申请号：EP21306755.6

申请日：2021-12-13

申请人： Murata Manufacturing Co., Ltd.

发明人： SOULIER, Brigitte ,  VOIRON, Frédéric ,  EL SABAHY, Julien

IPC分类号： C25D11/02 ,  H01L49/02 ,  C25D11/18

摘要： A method for manufacturing an electrical device comprising:
- anodizing a portion of an anodizable metal layer so as to obtain an anodic porous oxide region (100) and an anodizable metal region (101) adjoining the anodic porous oxide region, the anodic porous oxide region being thicker than the anodizable metal region,
- depositing a layer of liner material (105) on the anodic porous oxide region and on the anodizable metal region,
- depositing a layer of filler material (106) on the layer of liner material, the filler material being different from the liner material, to obtain a stacked structure having a top surface,
- planarizing the stacked structure from its top surface until reaching the layer of liner material, so as to expose a portion of liner (111) material located above at least a portion of the anodic porous oxide region (112),
- removing the exposed portion of liner material.

公开(公告)号：EP4191624A1

公开(公告)日：2023-06-07

申请号：EP22188103.0

申请日：2022-08-01

申请人： Samsung Electronics Co., Ltd. ,  Cornell University

发明人： LEE, Kiyoung ,  SCHLOM, Darrell G ,  BARONE, Matthew R ,  JEONG, Myoungho

IPC分类号： H01G4/12 ,  H01G4/40 ,  H01G4/33 ,  H01L49/02 ,  H01G4/20

摘要： A dielectric thin film includes a stack structure of a perovskite material layer including at least two Group II elements and a rocksalt layer on the perovskite material layer and including at least two Group II elements. A first content ratio of the at least two Group II elements included in the perovskite material layer may be the same as a second content ratio of the at least two Group II elements included in the rocksalt layer.

公开(公告)号：EP4156313A1

公开(公告)日：2023-03-29

申请号：EP22183014.4

申请日：2022-07-05

申请人： INTEL Corporation

发明人： LIN, Chia-Ching ,  CHANG, Sou-Chi ,  Oguz, Kaan ,  TUNG, I-Cheng ,  SEN GUPTA, Arnab ,  YOUNG, Ian ,  AVCI, Uygar E. ,  METZ, Mathew

IPC分类号： H01L49/02

摘要： Embodiments described herein may be related to apparatuses, processes, and techniques related to stacked MIM capacitors with multiple metal and dielectric layers that include insulating spacers on edges of one or more of the multiple layers to prevent unintended electrical coupling between metal layers during manufacturing. The dielectric layers may include Perovskite-based materials. Other embodiments may be described and/or claimed.