发明公开
- 专利标题： METHOD FOR PRODUCING TRANSISTOR
- 专利标题（中）： VERFAHREN ZUR HERSTELLUNG EINES TRANSISTORS
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申请号： EP11818031.4申请日： 2011-07-26
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公开(公告)号： EP2608249A1公开(公告)日： 2013-06-26
- 发明人: SHIMADA, Kenji , MATSUNAGA, Hiroshi , ABE, Kojiro , YAMADA, Kenji
- 申请人： Mitsubishi Gas Chemical Company, Inc.
- 申请人地址： 5-2, Marunouchi 2-chome Chiyoda-ku Tokyo 100-8324 JP
- 专利权人： Mitsubishi Gas Chemical Company, Inc.
- 当前专利权人： Mitsubishi Gas Chemical Company, Inc.
- 当前专利权人地址： 5-2, Marunouchi 2-chome Chiyoda-ku Tokyo 100-8324 JP
- 代理机构： Müller-Boré & Partner Patentanwälte
- 优先权： JP2010210827 20100921; JP2010184999 20100820
- 国际公布： WO2012023387 20120223
- 主分类号： H01L21/306
- IPC分类号： H01L21/306 ; H01L21/28 ; H01L21/308 ; H01L21/336 ; H01L21/8234 ; H01L27/088 ; H01L29/423 ; H01L29/49 ; H01L29/78
摘要：
According to the present invention, there is provided a process for producing a transistor having a high precision and a high quality with a high yield by selectively etching a natural silicon oxide film, and further by selectively etching a dummy gate made of silicon. The present invention relates to a process for producing a transistor using a structural body which includes a substrate, and a dummy gate laminate formed by laminating at least a high dielectric material film and a dummy gate made of silicon having a natural silicon oxide film on a surface thereof, a side wall disposed to cover a side surface of the laminate and an interlayer insulating film disposed to cover the side wall which are provided on the substrate, said process including an etching step using a specific etching solution and thereby replacing the dummy gate with an aluminum metal gate.
公开/授权文献
- EP2608249B1 METHOD FOR PRODUCING TRANSISTOR 公开/授权日：2019-02-27
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