利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

7 条记录 (耗时 0.013 秒)

    METHOD FOR PRODUCING TRANSISTOR
    1.
    发明公开
    METHOD FOR PRODUCING TRANSISTOR 审中-公开
    VERFAHREN ZUR HERSTELLUNG EINES TRANSISTORS

    公开(公告)号：EP2608249A1

    公开(公告)日：2013-06-26

    申请号：EP11818031.4

    申请日：2011-07-26

    申请人： Mitsubishi Gas Chemical Company, Inc.

    发明人： SHIMADA, Kenji ,  MATSUNAGA, Hiroshi ,  ABE, Kojiro ,  YAMADA, Kenji

    IPC分类号： H01L21/306 ,  H01L21/28 ,  H01L21/308 ,  H01L21/336 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78

    CPC分类号： H01L29/401 ,  C09K13/06 ,  C09K13/08 ,  H01L21/02068 ,  H01L21/28079 ,  H01L21/31111 ,  H01L21/32134 ,  H01L21/82345 ,  H01L21/823842 ,  H01L29/66545

    摘要： According to the present invention, there is provided a process for producing a transistor having a high precision and a high quality with a high yield by selectively etching a natural silicon oxide film, and further by selectively etching a dummy gate made of silicon. The present invention relates to a process for producing a transistor using a structural body which includes a substrate, and a dummy gate laminate formed by laminating at least a high dielectric material film and a dummy gate made of silicon having a natural silicon oxide film on a surface thereof, a side wall disposed to cover a side surface of the laminate and an interlayer insulating film disposed to cover the side wall which are provided on the substrate, said process including an etching step using a specific etching solution and thereby replacing the dummy gate with an aluminum metal gate.

    摘要翻译： 根据本发明，通过选择性地蚀刻天然氧化硅膜，并且进一步通过选择性地蚀刻由硅制成的虚拟栅极，提供了以高产率制造具有高精度和高质量的晶体管的方法。 本发明涉及一种使用包括基板的结构体制造晶体管的方法，以及通过将至少一层高介电材料膜和由硅制成的具有天然氧化硅膜的虚拟栅层叠在一起而形成的虚拟栅叠层 表面，设置成覆盖层压体的侧表面的侧壁和设置成覆盖设置在基板上的侧壁的层间绝缘膜，所述工艺包括使用特定蚀刻溶液的蚀刻步骤，从而替换伪栅极 与铝金属门。

    SEMICONDUCTOR SURFACE TREATMENT AGENT
    2.
    发明公开
    SEMICONDUCTOR SURFACE TREATMENT AGENT 审中-公开
    MITTEL ZUR BEHANDLUNG EINERHALBLEITEROBERFLÄCHE

    公开(公告)号：EP1956644A1

    公开(公告)日：2008-08-13

    申请号：EP06833742.7

    申请日：2006-11-30

    申请人： MITSUBISHI GAS CHEMICAL COMPANY, INC.

    发明人： YAGUCHI, Kazuyoshi ,  SHIMADA, Kenji ,  ABE, Kojiro

    IPC分类号： H01L21/308 ,  H01L21/304 ,  H01L29/78

    CPC分类号： H01L21/31111 ,  H01L29/517

    摘要： A semiconductor surface treatment agent containing a fluorine compound, a water-soluble organic solvent and an inorganic acid, with the balance being water and a method for manufacturing a semiconductor device by etching a high dielectric constant insulating material using the subject semiconductor surface treatment agent are provided. According to the present invention, it is possible to selectively and efficiently etch a high dielectric constant insulating material to be used in a transistor formation process of the semiconductor device manufacture; and it is also possible to achieve etching with ease within a short period of time even for a high dielectric constant insulating material to which etching is hardly applied.

    摘要翻译： 含有氟化合物，水溶性有机溶剂和无机酸，其余为水的半导体表面处理剂和使用该对象半导体表面处理剂蚀刻高介电常数绝缘材料的半导体器件的制造方法， 提供。 根据本发明，可以选择性地和有效地蚀刻用于半导体器件制造的晶体管形成过程中的高介电常数绝缘材料; 并且即使对于难以施加蚀刻的高介电常数绝缘材料，也可以在短时间内容易地进行蚀刻。

    LIQUID COMPOSITION FOR CLEANING, METHOD FOR CLEANING SEMICONDUCTOR ELEMENT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
    3.
    发明公开
    LIQUID COMPOSITION FOR CLEANING, METHOD FOR CLEANING SEMICONDUCTOR ELEMENT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT 有权
    用于清洁处理液组合物用于清洁半导体部件和方法的半导体元件

    公开(公告)号：EP2863415A1

    公开(公告)日：2015-04-22

    申请号：EP13804977.0

    申请日：2013-06-06

    申请人： Mitsubishi Gas Chemical Company, Inc.

    发明人： SHIMADA, Kenji ,  ABE, Kojiro ,  YOSHIDA, Hiroshi ,  OHTO, Masaru

    IPC分类号： H01L21/304 ,  G03F7/42 ,  H01L21/027 ,  H01L21/768

    CPC分类号： C11D11/0047 ,  C11D3/044 ,  C11D3/28 ,  C11D3/30 ,  C11D3/43 ,  C11D7/06 ,  C11D7/3209 ,  C11D7/3281 ,  G03F7/425 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/308 ,  H01L21/31111 ,  H01L21/31133 ,  H01L21/76814 ,  H01L21/76838

    摘要： [Problems to be Solved] The object is to provide a cleaning liquid composition, which suppresses damage to a low-dielectric constant interlayer dielectric film, a wiring material, such as copper or a copper alloy, a barrier metal, and a barrier dielectric film and removes an organosiloxane thin film, a dry etching residue and a photoresist on a treatment target surface in a process for producing a semiconductor device, as well as a cleaning method for a semiconductor device using the same, and a production process for a semiconductor device using the same.
    [Solution] A cleaning liquid composition for producing a semiconductor device according to the invention contains 0.05 to 25 % by weight of a quaternary ammonium hydroxide, 0.001 to 1.0 % by weight of potassium hydroxide, 5 to 85 % by weight of a water-soluble organic solvent, and 0.0005 to 10 % by weight of pyrazoles.

    摘要翻译： [要解决的问题该目的是提供一种洗涤液组合物，其抑制到一个低介电常数层间电介质的电影，布线材料，颜色损害：例如铜或铜合金，阻挡金属和阻挡电介质成膜 有机硅氧烷薄膜，干蚀刻残留物和用于制造半导体器件，以及使用相同的用于半导体器件的清洗方法在工艺上的处理目标表面的光致抗蚀剂，以及一种用于半导体器件的制造过程，并移除 使用相同的。 [解决方法]用于生产半导体器件的雅丁本发明的洗涤液组合物中含有0:05％至25％（重量）的氢氧化季铵，0.001％至1.0％（重量）的氢氧化钾，5〜85％的（重量）的水溶性 有机溶剂，和0.0005〜10％（重量）吡唑类。

    CLEANING SOLUTION FOR SEMICONDUCTOR DEVICE OR DISPLAY DEVICE, AND CLEANING METHOD
    7.
    发明公开
    CLEANING SOLUTION FOR SEMICONDUCTOR DEVICE OR DISPLAY DEVICE, AND CLEANING METHOD 有权
    清洗液的半导体元件或显示元件清洗等

    公开(公告)号：EP1959303A1

    公开(公告)日：2008-08-20

    申请号：EP06833212.1

    申请日：2006-11-24

    申请人： MITSUBISHI GAS CHEMICAL COMPANY, INC.

    发明人： SHIMADA, Kenji ,  ABE, Kojiro

    IPC分类号： G03F7/42 ,  H01L21/027 ,  H01L21/304

    CPC分类号： H01L21/02063 ,  C11D3/30 ,  C11D3/3723 ,  C11D7/3209 ,  C11D11/0047 ,  G03F7/425

    摘要： A cleaning solution for semiconductor devices or display devices containing a polyamine of a specified structure having two or more amino groups in adjacent positions of a carbon chain or a salt thereof and a cleaning method of semiconductor devices or display devices using the subject cleaning solution are provided. The cleaning solution for semiconductor devices or display devices of the present invention has high safety, brings a little burden on the environment and is able to easily remove etching residues on a semiconductor substrate in a short time; on that occasion, it is possible to achieve microfabrication without utterly corroding wiring materials; and furthermore, rinsing can be achieved with only water without necessity for use of, as a rinse solution, an organic solvent such as alcohols. In consequence, according to the cleaning method of the present invention, in manufacturing semiconductor devices or display devices, it is possible to extremely advantageously manufacture circuit wirings with a little burden on the environment, high precision and high quality on an industrial scale.