发明授权
- 专利标题： CURVED RF ELECTRODE FOR IMPROVED CMAX
- 专利标题（中）： 弯曲射频电极改善CMAX
-
申请号： EP14781789.4申请日： 2014-09-24
-
公开(公告)号： EP3053181B1公开(公告)日： 2018-04-18
- 发明人: RENAULT, Mickael , JOSHI, Vikram , VAN KAMPEN, Robertus Petrus , MAGUIRE, Thomas L. , KNIPE, Richard L.
- 申请人： Cavendish Kinetics, Inc.
- 申请人地址： 3833 North First Street San Jose, CA 95134 US
- 专利权人： Cavendish Kinetics, Inc.
- 当前专利权人： Cavendish Kinetics, Inc.
- 当前专利权人地址： 3833 North First Street San Jose, CA 95134 US
- 代理机构： Gill Jennings & Every LLP
- 优先权： US201361885678P 20131002
- 国际公布： WO2015050761 20150409
- 主分类号： H01H59/00
- IPC分类号： H01H59/00 ; H01G5/16
摘要：
The present invention generally relates to a MEMS device and a method of manufacture thereof. The RF electrode, and hence, the dielectric layer thereover, has a curved upper surface that substantially matches the contact area of the bottom surface of the movable plate. As such, the movable plate is able to have good contact with the dielectric layer and thus, good capacitance is achieved.
公开/授权文献
- EP3053181A1 CURVED RF ELECTRODE FOR IMPROVED CMAX 公开/授权日：2016-08-10
信息查询
