利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

72 条记录 (耗时 0.018 秒)

    HEAD-HAND CAPACITANCE COMPENSATION WITH DIGITAL VARIABLE CAPACITOR
    5.
    发明公开
    HEAD-HAND CAPACITANCE COMPENSATION WITH DIGITAL VARIABLE CAPACITOR 审中-公开
    KOPF-KAPAZITÄTSAUSGLEICHMIT DIGITALEM VARIABLEM KONDENSATOR

    公开(公告)号：EP3130035A1

    公开(公告)日：2017-02-15

    申请号：EP15716687.7

    申请日：2015-04-02

    申请人： Cavendish Kinetics, Inc.

    发明人： PARKHURST, Ray ,  TORNATTA, Paul Anthony, Jr.

    IPC分类号： H01Q1/24 ,  H01Q7/00 ,  H01Q9/04 ,  H01Q9/42

    CPC分类号： H01Q1/245 ,  H01Q1/48 ,  H01Q7/005 ,  H01Q9/0421 ,  H01Q9/42

    摘要： The present disclosure generally relates to a device having a capacitance sensor that detects a change in capacitance that occurs in the antenna whenever the antenna is in close proximity to a user's hand and/or head. Following detection of the capacitance change, the capacitance of the antenna may be changed by using a variable capacitor that is coupled to the sensor through a controller.

    摘要翻译： 本公开总体上涉及一种具有电容传感器的装置，每当天线紧靠用户的手和/或头部时，其检测天线中发生的电容变化。 在检测到电容变化之后，可以通过使用通过控制器耦合到传感器的可变电容器来改变天线的电容。

    METHOD FOR ACHIEVING GOOD ADHESION BETWEEN DIELECTRIC AND ORGANIC MATERIAL
    7.
    发明公开
    METHOD FOR ACHIEVING GOOD ADHESION BETWEEN DIELECTRIC AND ORGANIC MATERIAL 审中-公开
    法达到电介质和有机材料之间具有良好的责任

    公开(公告)号：EP3052429A1

    公开(公告)日：2016-08-10

    申请号：EP14777233.9

    申请日：2014-09-15

    申请人： Cavendish Kinetics, Inc.

    发明人： RENAULT, Mickael

    IPC分类号： B81C1/00

    CPC分类号： B81C1/0038 ,  B81C1/00801 ,  B81C2201/0108 ,  B81C2201/0176 ,  B81C2201/053

    摘要： The present invention generally relates to a method for forming a MEMS device and a MEMS device formed by the method. When forming the MEMS device, sacrificial material is deposited around the switching element within the cavity body. The sacrificial material is eventually removed to free the switching element in the cavity. The switching element has a thin dielectric layer thereover to prevent etchant interaction with the conductive material of the switching element. During fabrication, the dielectric layer is deposited over the sacrificial material. To ensure good adhesion between the dielectric layer and the sacrificial material, a silicon rich silicon oxide layer is deposited onto the sacrificial material before depositing the dielectric layer thereon.

    METHOD OF FORMING PLANAR SACRIFICIAL MATERIAL IN A MEMS DEVICE
    8.
    发明公开
    METHOD OF FORMING PLANAR SACRIFICIAL MATERIAL IN A MEMS DEVICE 有权
    VERFAHREN ZUR HERSTELLUNG EINES PLANAREN OPEERMATERIALS IN EINER MEMS-VORRICHTUNG

    公开(公告)号：EP3041783A2

    公开(公告)日：2016-07-13

    申请号：EP14771660.9

    申请日：2014-09-02

    申请人： Cavendish Kinetics, Inc.

    发明人： TROY, Brian I. ,  BOBEY, James F. ,  RENAULT, Mickael ,  LACEY, Joseph Damian Gordon ,  MAGUIRE, Thomas L.

    IPC分类号： B81C1/00

    CPC分类号： B81C1/00611 ,  H01G5/16

    摘要： The present invention generally relates to a method of fabricating a MEMS device. In the MEMS device, a movable plate is disposed within a cavity such that the movable plate is movable within the cavity. To form the cavity, sacrificial material may be deposited and then the material of the movable plate is deposited thereover. The sacrificial material is removed to free the mov able plate to move within the cavity. The sacrificial material, once deposited, may not be sufficiently planar because the height difference between the lowest point and the highest point of the sacrificial material may be quite high. To ensure the movable plate is sufficiently planar, the planarity of the sacrificial material should be maximized. To maximize the surface planarity of the sacrificial material, the sacrificial material may be deposited and then conductive heated to permit the sacrificial material to reflow and thus, be planarized.

    摘要翻译： 本发明一般涉及制造MEMS器件的方法。 在MEMS装置中，可移动板设置在空腔内，使得可动板可在空腔内移动。 为了形成空腔，可以沉积牺牲材料，然后将可移动板的材料沉积在其上。 去除牺牲材料以使可移动板在空腔内移动。 由于牺牲材料的最低点和最高点之间的高度差可能相当高，牺牲材料一旦被沉积就可能不够平坦。 为了确保可动板足够平坦，牺牲材料的平面度应该被最大化。 为了使牺牲材料的表面平坦度最大化，可以沉积牺牲材料，然后进行导电加热，以使牺牲材料回流并因此被平坦化。

    STRESS CONTROL DURING PROCESSING OF A MEMS DIGITAL VARIABLE CAPACITOR (DVC)
    10.
    发明公开
    STRESS CONTROL DURING PROCESSING OF A MEMS DIGITAL VARIABLE CAPACITOR (DVC) 审中-公开
    曝光控制微机电DIGITAL可变电容器的加工过程中（DVC）

    公开(公告)号：EP3014639A1

    公开(公告)日：2016-05-04

    申请号：EP14733050.0

    申请日：2014-06-04

    申请人： Cavendish Kinetics, Inc.

    发明人： VAN KAMPEN, Robertus, Petrus ,  KNIPE, Richard, L.

    IPC分类号： H01G5/16 ,  H01G5/18

    CPC分类号： H01G5/16 ,  H01G5/18 ,  H01L28/60

    摘要： The present invention generally relates to a MEMS digital variable capacitor (DVC) (900) and a method for manufacture thereof. The movable plate (938) within a MEMS DVC should have the same stress level to ensure proper operation of the MEMS DVC. To obtain the same stress level, the movable plate is decoupled from CMOS ground during fabrication. The movable plate is only electrically coupled to CMOS ground after the plate has been completely formed. The coupling occurs by using the same layer (948) that forms the pull-up electrode as the layer that electrically couples the movable plate to CMOS ground. As the same layer couples the movable plate to CMOS ground and also provides the pull-up electrode for the MEMS DVC, the deposition occurs in the same processing step. By electrically coupling the movable plate to CMOS ground after formation, the stress in each of the layers of the movable plate can be substantially identical.