发明公开
- 专利标题： STRAIN RELIEF EPITAXIAL LIFT-OFF VIA PRE-PATTERNED MESAS
- 专利标题（中）： 通过预先设置的MESAS应变释放外延提升
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申请号： EP16715932.6申请日： 2016-03-18
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公开(公告)号： EP3271950A1公开(公告)日： 2018-01-24
- 发明人: FORREST, Stephen, R. , LEE, Kyusang , FAN, Dejiu
- 申请人： The Regents Of The University Of Michigan
- 申请人地址： Office of Technology Transfer 1600 Huron Parkway 2nd Floor Ann Arbor, Michigan 48109 US
- 专利权人： The Regents Of The University Of Michigan
- 当前专利权人： The Regents Of The University Of Michigan
- 当前专利权人地址： Office of Technology Transfer 1600 Huron Parkway 2nd Floor Ann Arbor, Michigan 48109 US
- 代理机构： Finnegan Europe LLP
- 优先权： US201562134833P 20150318
- 国际公布： WO2016149629 20160922
- 主分类号： H01L31/18
- IPC分类号： H01L31/18 ; H01L21/78
摘要：
Disclosed herein are methods to eliminate or reduce the peeling-off of epitaxial lifted-off thin film epilayers on secondary host substrates that allow for the fabrication of high yield ELO processed thin film devices. The methods employ patterned strain-relief trenches.
公开/授权文献
- EP3271950B1 STRAIN RELIEF EPITAXIAL LIFT-OFF VIA PRE-PATTERNED MESAS 公开/授权日：2019-03-06
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