SEMICONDUCTOR INTEGRATED DEVICE WITH ELECTRICAL CONTACTS BETWEEN STACKED DIES AND CORRESPONDING MANUFACTURING PROCESS
摘要:
Described herein is an integrated device (1), having: a first die (2); a second die (6) coupled in a stacked way on the first die (2) along a vertical axis (z); a coupling region (16) arranged between facing surfaces (2a, 6a) of the first die (2) and of the second die (6), which face one another along the vertical axis (z) and lie in a horizontal plane (xy) orthogonal to the vertical axis (z), for mechanical coupling of the first and second dies; electrical-contact elements (17) carried by the facing surfaces (2a, 6a) of the first and second dies, aligned in pairs along the vertical axis (z); and conductive regions (18) arranged between the pairs of electrical-contact elements (17) carried by the facing surfaces (2a, 6a) of the first and second dies, for their electrical coupling. Supporting elements (20) are arranged at the facing surface (2a; 6a) of at least one between the first and second dies and elastically support respective electrical-contact elements.
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