- 专利标题: SILICON NITRIDE CIRCUIT BOARD AND SEMICONDUCTOR MODULE USING SAME
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申请号: EP16850843.0申请日: 2016-07-27
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公开(公告)号: EP3358615A1公开(公告)日: 2018-08-08
- 发明人: KATO, Hiromasa , KITAMORI, Noboru
- 申请人: Kabushiki Kaisha Toshiba , Toshiba Materials Co., Ltd.
- 申请人地址: 1-1 Shibaura 1-chome Minato-ku Tokyo 105-8001 JP
- 专利权人: Kabushiki Kaisha Toshiba,Toshiba Materials Co., Ltd.
- 当前专利权人: Kabushiki Kaisha Toshiba,Toshiba Materials Co., Ltd.
- 当前专利权人地址: 1-1 Shibaura 1-chome Minato-ku Tokyo 105-8001 JP
- 代理机构: Henkel, Breuer & Partner
- 优先权: JP2015189991 20150928
- 国际公布: WO2017056666 20170406
- 主分类号: H01L23/13
- IPC分类号: H01L23/13 ; H01L23/12 ; H01L23/36 ; H05K1/02
摘要:
The present invention provides a silicon nitride circuit board in which metal plates are attached on front and rear sides of a silicon nitride substrate having a three-point bending strength of 500 MPa or higher, with attachment layers interposed therebetween, wherein assuming that a thickness of the metal plate on the front side is denoted by t1, and a thickness of the metal plate on the rear side is denoted by t2, at least one of the thicknesses t1 and t2 is 0.6 mm or larger, a numerical relation: 0.10 ≤ |t1 - t2| ≤ 0.30 mm is satisfied, and warp amounts of the silicon nitride substrate in a long-side direction and a short-side direction both fall within a range from 0.01 to 1.0 mm. Due to above configuration, TCT properties of the silicon nitride circuit board can be improved even if the thicknesses of the front and rear metal plates are large.
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