- 专利标题： OXYNITRIDE THIN FILM AND CAPACITANCE ELEMENT
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申请号： EP18165009.4申请日： 2018-03-29
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公开(公告)号： EP3382726A1公开(公告)日： 2018-10-03
- 发明人: SHIBAHARA, Takeshi , NAGAMINE, Yuki , YAMAZAKI, Kumiko
- 申请人： TDK Corporation
- 申请人地址： 3-9-1, Shibaura Minato-ku Tokyo 108-0023 JP
- 专利权人： TDK Corporation
- 当前专利权人： TDK Corporation
- 当前专利权人地址： 3-9-1, Shibaura Minato-ku Tokyo 108-0023 JP
- 代理机构： Epping - Hermann - Fischer
- 优先权： JP2017071128 20170331; JP2018013705 20180130
- 主分类号： H01G4/33
- IPC分类号： H01G4/33 ; H01G4/08 ; H01G4/12 ; H01L49/02 ; C04B35/495 ; C04B35/46
摘要：
The object of the present invention is to provide the dielectric thin film having a main component including a oxynitride having excellent dielectric property, and a capacitance element including the dielectric thin film.
A dielectric thin film comprising a main component comprised of an oxynitride expressed by a compositional formula of A a B b O o N n (a + b + o + n =5), wherein said "A" is one or more selected from the group consisting of Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, said "B" is one or more selected from the group consisting of Ta, Nb, Ti, and W, and crystalline particles constituting said dielectric thin film are polycrystalline which are not oriented to a particular crystal plane orientation, and further the crystalline particles comprises columnar shape crystals.
A dielectric thin film comprising a main component comprised of an oxynitride expressed by a compositional formula of A a B b O o N n (a + b + o + n =5), wherein said "A" is one or more selected from the group consisting of Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, said "B" is one or more selected from the group consisting of Ta, Nb, Ti, and W, and crystalline particles constituting said dielectric thin film are polycrystalline which are not oriented to a particular crystal plane orientation, and further the crystalline particles comprises columnar shape crystals.
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