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公开(公告)号：EP3382727A1
公开(公告)日：2018-10-03
申请号：EP18165031.8
申请日：2018-03-29
申请人： TDK Corporation
CPC分类号： H01G4/33 , C01B21/0821 , C01P2002/60 , C01P2002/78 , C01P2006/40 , C04B35/495 , C04B35/58007 , C04B35/6262 , C04B2235/3201 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/3232 , C04B2235/3251 , C04B2235/3258 , C04B2235/77 , C04B2235/781 , C04B2235/787 , H01G4/085 , H01G4/1218 , H01G4/1272 , H01G4/306 , H01L28/55
摘要： The object of the present invention is to provide a dielectric thin film and a capacitance element having excellent dielectric property.
A dielectric thin film comprising a main component comprised of an oxynitride expressed by a compositional formula of A a B b O o N n (a + b + o + n =5), wherein said "A" is one or more selected from the group consisting of Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, said "B" is one or more selected from the group consisting of Ta, Nb, Ti, and W, and crystalline particles constituting said dielectric thin film are polycrystalline which are not aligned to a particular crystal plane orientation, and a size of a crystallite of the crystalline particles included in the dielectric thin film is 100 nm or less.-
公开(公告)号：EP3382726A1
公开(公告)日：2018-10-03
申请号：EP18165009.4
申请日：2018-03-29
申请人： TDK Corporation
CPC分类号： C04B35/58007 , C04B35/46 , C04B35/495 , C04B35/62218 , C04B35/6262 , C04B35/6264 , C04B35/62655 , C04B35/63416 , C04B35/64 , C04B2235/3886 , C04B2235/602 , C04B2235/612 , C04B2235/656 , C04B2235/768 , H01B3/10 , H01G4/085 , H01G4/1218 , H01G4/1272 , H01G4/33 , H01L28/55
摘要： The object of the present invention is to provide the dielectric thin film having a main component including a oxynitride having excellent dielectric property, and a capacitance element including the dielectric thin film.
A dielectric thin film comprising a main component comprised of an oxynitride expressed by a compositional formula of A a B b O o N n (a + b + o + n =5), wherein said "A" is one or more selected from the group consisting of Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, said "B" is one or more selected from the group consisting of Ta, Nb, Ti, and W, and crystalline particles constituting said dielectric thin film are polycrystalline which are not oriented to a particular crystal plane orientation, and further the crystalline particles comprises columnar shape crystals.-
公开(公告)号：EP3412793A1
公开(公告)日：2018-12-12
申请号：EP17747452.5
申请日：2017-02-01
申请人： TDK Corporation
摘要： The purpose of the present invention is to provide a polycrystalline dielectric thin film and a capacitor element that have a large relative dielectric constant. Provided is a polycrystalline dielectric thin film that has a perovskite oxynitride as a principal component. The perovskite oxynitride is represented by compositional formula Aa1Bb1OoNn (a1+b1+o+n=5), and the a-axis length of the crystal lattice of the perovskite oxynitride is larger than a theoretical value.
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公开(公告)号：EP3392889A1
公开(公告)日：2018-10-24
申请号：EP17747450.9
申请日：2017-02-01
申请人： TDK Corporation
摘要： [Problem] To provide a polycrystalline dielectric thin film and capacitor element having a small dielectric loss tan δ.
[Solution] A polycrystalline dielectric thin film, in which the main composition is a perovskite oxynitride. The perovskite oxynitride is expressed by the compositional formula AaBbOoNn (a+b+o+n = 5), where a/b > 1 and n ≥ 0.7.
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