- 专利标题： SEMICONDUCTOR DEVICE WITH THROUGH PACKAGE VIA AND METHOD THEREFOR
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申请号： EP23195227.6申请日： 2023-09-04
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公开(公告)号： EP4336550A1公开(公告)日： 2024-03-13
- 发明人: Vincent, Michael B. , Hayes, Scott M. , Gong, Zhiwei , van Gemert, Leo , Kamphuis, Antonius Hendrikus Jozef , Huang, Wen Hung
- 申请人： NXP USA, Inc.
- 申请人地址： US Austin TX 78735 6501 William Cannon Drive
- 代理机构： Hardingham, Christopher Mark
- 优先权： US202217930515 20220908
- 主分类号： H01L23/29
- IPC分类号： H01L23/29 ; H01L23/31 ; H01L23/538 ; H01L23/552 ; H01L23/66 ; H01L21/60 ; H01L23/498
摘要：
A method of forming a semiconductor device is provided. The method includes encapsulating with an encapsulant at least a portion of a semiconductor die and a package substrate, the encapsulant including an additive selectively activated by way of a laser. A first opening is formed in the encapsulant, the first opening exposing a predetermined first portion of the package substrate. The additive is activated at the sidewalls of the first opening. A second opening is formed in the encapsulant, the second opening encircling the first opening and exposing a predetermined second portion of the package substrate. The additive is activated at the sidewalls the second opening. A conductive material is plated on the additive activated portions of the encapsulant.
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