Reducing the number of photolithography steps, and an object thereof is to provide a fabricated thin film transistor, MOS field effect transistor fabrication process by the Oyobi this the possible thin film transistor, MOS field effect transistors forming a fine pattern. These thin film transistors, MOS field-effect transistor is used in an electronic device. TFT is provided to cover the first insulating layer provided on the substrate, a source electrode and a drain electrode provided on the first insulating layer, a first insulating layer and the source and drain electrodes and was the semiconductor layer, comprising a second insulating layer provided on the semiconductor layer, and a second gate electrode provided on the insulating layer, the first insulating layer is made of a parent repellent material, and It has a recess, wherein the source electrode and the drain electrode are provided so as to fill the recess of the first insulating layer.