本发明提出一种金属带保护环沟槽短接本体区以缩小端接区之结构，其中形成在第一导电类型之半导体基板中之半导体功率组件，包括一个主动区和一个包围着主动区并且设置在半导体基板边缘附近之端接区。端接区包括多个用导电材料填充之沟槽，构成一个屏蔽电极，沿沟槽侧壁和沟槽底面借由电介质层绝缘， 其中沟槽穿过半导体基板顶面附近之第二导电类型之本体区垂直延伸到第一导电类型之表面屏蔽区。设置在表面屏蔽区下方之第二导电类型之掺杂区，穿过沟槽之底部延伸，并包围着沟槽底部。在半导体基板之顶面上方设置至少一个金属接头，电连接到至少两个沟槽之屏蔽电极，并且短接至本体区。本发明在降低导通电阻之同时，能够提高功率组件可承受之击穿电压。

This invention discloses a semiconductor power device formed in a semiconductor substrate of a first conductivity type comprises an active cell area and a termination area surrounding the active cell area and disposed near edges of the semiconductor substrate. The termination area includes a plurality or trenches filled with a conductivity material forming a shield electrode and insulated by a dielectric layer along trench sidewalls and trench bottom surface wherein the trenches extending vertically through a body region of a second conductivity type near a top surface of the semiconductor substrate and further extending through a surface shield region of the first conductivity type. A dopant region of the second conductivity type disposed below the surface shield region extending across and surrounding a trench bottom portion of the trenches. At least a metal connector disposed above the top surface of the semiconductor substrates electrically connecting to the shield electrode of at least two trenches and shorted to the body region.