一种被处理体之凹部充填方法，该被处理体具有半导体基板及设于该半导体基板上之绝缘膜，该凹部贯穿该绝缘膜俾使延伸至该半导体基板为止，该方法包含：沿着区隔该凹部之壁面形成掺杂杂质之第1半导体层之步骤，该第1半导体层包含沿着区隔该凹部之侧壁面而延伸之第1非晶系半导体区域；于该第1半导体层上形成第2半导体层之步骤，该第2半导体层具有较该第1半导体层之杂质浓度为低之杂质浓度，且具有较该第1半导体层之膜厚为小之膜厚，该第2半导体层包含形成于该第1非晶系半导体区域上之第2非晶系半导体区域；将被处理体退火之步骤，于该凹部之底部，从该第1半导体层及该第2半导体层形成对应于该半导体基板之结晶之磊晶区；及蚀刻该第1非晶系半导体区域及该第2非晶系半导体区域之步骤。

A depression filling method for filling a depression of a workpiece including a semiconductor substrate and an insulating film formed on the semiconductor substrate includes: forming an impurity-doped first semiconductor layer along a wall surface which defines the depression; forming, on the first semiconductor layer, a second semiconductor layer which is lower in impurity concentration than the first semiconductor layer and which is smaller in thickness than the first semiconductor layer; annealing the workpiece to form an epitaxial region at the bottom of the depression corresponding to crystals of the semiconductor substrate from the first semiconductor layer and the second semiconductor layer; and etching the first amorphous semiconductor region and the second amorphous semiconductor region.