本发明系一种半导体设备之制造方法，进程，记录媒体及基板处理系统，其课题为抑制半导体设备之特性的不均。 解决手段为具有：研磨具有凸构造而加以形成第一硅含有层的基板之工程，和取得施以研磨之后之第一硅含有层之面内的膜厚分布数据之工程，和依据膜厚分布数据，决定使基板的中心侧之膜厚与在基板之外周侧的膜厚的差缩小之处理条件的工程，和供给处理气体而形成第二硅含有层之同时，依据处理条件，在基板之中心侧的处理气体的活性种之浓度与在基板之外周侧的处理气体的活性种之浓度则呈不同地使处理气体活性化，而修正第一硅含有层与第二硅含有层之层积膜之膜厚的工程者。

This invention relates to a manufacturing method, program and recording media and substrate treatment system of semiconductor device. A subject of this invention is to suppress non-uniformity of semiconductor device. The solution includes steps of a process of grinding a substrate having a convex structure to form a first silicon containing layer, a process of obtaining film thickness distribution data within the surface of the first silicon containing layer that has been imposed with grinding, a process of determining treatment conditions of reducing the difference between the film thickness at a center side of the substrate and the film thickness of an outer peripheral side of the substrate according to film thickness distribution data, and, based upon treatment condition, a process of activating the treatment gas so that the concentration of the active species of the treatment gas at the center side of the substrate is different from the concentration of the active species of the treatment gas at the outer peripheral side of the substrate to correct the film thicknesses of the laminated films of the first silicon containing layer and the second silicon containing layer when treatment gas is supplied to form the second silicon containing layer.