一种半导体组件包含：第一信道层，其设置于基板上方；第一源极/汲极区，其设置于基板上方；闸极介电层，其设置于第一信道层中之每一者上且缠绕第一信道层中之每一者；以及闸电极层，其设置于闸极介电层上且缠绕第一信道层中之每一者。第一信道层中之每一者包含由第一半导体材料制成之半导体线。半导体线延伸至第一源极/汲极区中。第一源极/汲极区中之半导体线由第二半导体材料卷绕。

A semiconductor device includes first channel layers disposed over a substrate, a first source/drain region disposed over the substrate, a gate dielectric layer disposed on and wrapping each of the first channel layers, and a gate electrode layer disposed on the gate dielectric layer and wrapping each of the first channel layers. Each of the first channel layers includes a semiconductor wire made of a first semiconductor material. The semiconductor wire extends into the first source/drain region. The semiconductor wire in the first source/drain regions is wrapped around by a second semiconductor material.