发明授权
- 专利标题： Method for forming capacitor, semiconductor device, module, and electronic device
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申请号： US15298306申请日： 2016-10-20
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公开(公告)号： US10002866B2公开(公告)日： 2018-06-19
- 发明人: Tetsuhiro Tanaka , Yutaka Okazaki
- 申请人： Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址： JP Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office
- 代理商 Eric J. Robinson
- 优先权： JP2015-214050 20151030
- 主分类号： H01L27/07
- IPC分类号： H01L27/07 ; H01L27/12 ; H01L29/94 ; H01L29/786 ; H05K1/18 ; H01G4/10 ; H01G4/008 ; H01L29/66 ; H01L21/8258 ; H01L27/06 ; H01L27/115 ; H01G4/40 ; H01L27/1156
摘要：
A miniaturized transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a large amount of on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device with high integration is provided. A novel capacitor is provided. The capacitor includes a first conductor, a second conductor, and an insulator. The first conductor includes a region overlapping with the second conductor with the insulator provided therebetween. The first conductor includes tungsten and silicon. The insulator includes a silicon oxide film that is formed by oxidizing the first conductor.
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