- 专利标题: Plasma processing apparatus and operation method thereof
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申请号: US14973592申请日: 2015-12-17
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公开(公告)号: US10008370B2公开(公告)日: 2018-06-26
- 发明人: Takeshi Ohmori , Daisuke Satou , Tatehito Usui , Satomi Inoue , Kenji Maeda
- 申请人: HITACHI HIGH-TECHNOLOGIES CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: HITACHI HIGH-TECHNOLOGIES CORPORATION
- 当前专利权人: HITACHI HIGH-TECHNOLOGIES CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: Miles & Stockbridge P.C.
- 优先权: JP2014-256786 20141219
- 主分类号: C23C16/513
- IPC分类号: C23C16/513 ; H01J37/32
摘要:
A plasma apparatus of processing a wafer disposed in a processing chamber using plasma includes one window, another window, a light receiving unit, a light source, and an optical branching unit which is disposed between the light source and the other window, branches light emitted by the light source to an optical path toward the processing chamber and an optical path in other direction, and reflects light in the processing chamber from the other window, and a detection unit which detects the light having been emitted from the plasma and received by the light receiving unit using one branched light and other branched and reflected light. The apparatus processes the wafer according to a condition for the processing which is adjusted based on a result of the detection.
公开/授权文献
- US20160177449A1 PLASMA PROCESSING APPARATUS AND OPERATION METHOD THEREOF 公开/授权日:2016-06-23
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