公开(公告)号：US10665516B2

公开(公告)日：2020-05-26

申请号：US15690660

申请日：2017-08-30

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Miyako Matsui ,  Kenichi Kuwahara ,  Naoki Yasui ,  Masaru Izawa ,  Tatehito Usui ,  Takeshi Ohmori

IPC: H01L21/67 ,  H01L21/66 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/306 ,  H01J37/32 ,  G01B11/06

Abstract: The present invention relates to an etching method including a reaction layer forming step of forming a reaction layer by adsorption of a gas on a surface of an etching target material, a desorption step of desorbing the reaction layer after the reaction layer forming step, and a removal step of removing the reaction layer or a deposited film, characterized in that the surface of the etching target material is etched by the reaction layer forming step and the desorption step.

公开(公告)号：US10453695B2

公开(公告)日：2019-10-22

申请号：US15714181

申请日：2017-09-25

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Soichiro Eto ,  Takeshi Ohmori ,  Tatehito Usui ,  Satomi Inoue

IPC: H01L21/3065 ,  H01J37/244 ,  H01L21/67 ,  H01L21/66 ,  H01J37/32 ,  H01L21/02

Abstract: A plasma processing apparatus processes a film layer to be processed disposed in advance on a surface of a wafer by using a plasma being switched on and off in a processing chamber in predetermined cycles and periods and includes a detection control unit for detecting a processing amount of the film layer on the surface of the wafer. The detection control unit includes a light source unit, a detection unit, and a film thickness/depth calculation unit. This detection control unit detects a plurality of times an amount indicating the intensity of light on a sample surface at predetermined cycles during a period in which the plasma is switched off while the wafer is being processed and detects a processing amount of the film layer on the sample surface by using the detected amount indicating the light intensity.

公开(公告)号：US10008370B2

公开(公告)日：2018-06-26

申请号：US14973592

申请日：2015-12-17

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Takeshi Ohmori ,  Daisuke Satou ,  Tatehito Usui ,  Satomi Inoue ,  Kenji Maeda

IPC: C23C16/513 ,  H01J37/32

CPC classification number: H01J37/32917 ,  H01J37/32926 ,  H01J37/32972 ,  H01J37/3299

Abstract: A plasma apparatus of processing a wafer disposed in a processing chamber using plasma includes one window, another window, a light receiving unit, a light source, and an optical branching unit which is disposed between the light source and the other window, branches light emitted by the light source to an optical path toward the processing chamber and an optical path in other direction, and reflects light in the processing chamber from the other window, and a detection unit which detects the light having been emitted from the plasma and received by the light receiving unit using one branched light and other branched and reflected light. The apparatus processes the wafer according to a condition for the processing which is adjusted based on a result of the detection.

公开(公告)号：US10622269B2

公开(公告)日：2020-04-14

申请号：US15690660

申请日：2017-08-30

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Miyako Matsui ,  Kenichi Kuwahara ,  Naoki Yasui ,  Masaru Izawa ,  Tatehito Usui ,  Takeshi Ohmori

IPC: H01L21/67 ,  H01L21/66 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/306 ,  H01J37/32 ,  G01B11/06

Abstract: The present invention relates to an etching method including a reaction layer forming step of forming a reaction layer by adsorption of a gas on a surface of an etching target material, a desorption step of desorbing the reaction layer after the reaction layer forming step, and a removal step of removing the reaction layer or a deposited film, characterized in that the surface of the etching target material is etched by the reaction layer forming step and the desorption step.

公开(公告)号：US20190286632A1

公开(公告)日：2019-09-19

申请号：US16284879

申请日：2019-02-25

Applicant: Hitachi High-Technologies Corporation

Inventor： Yutaka Okuyama ,  Takeshi Ohmori ,  Masaru Kurihara ,  Hyakka Nakada

IPC: G06F16/2458 ,  H01L21/67 ,  H01J37/32 ,  G06N20/00 ,  G06N5/04

Abstract: A model learning unit learns a prediction model on the basis of learning data, a target setting unit sets a target output parameter value by interpolating between a goal output parameter value and an output parameter value which is the closest to the goal output parameter value in output parameter values in the learning data, a processing condition search unit estimates input parameter values which corresponds to the goal output parameter value and the target output parameter value, a model learning unit updates the prediction model by using a set of the estimated input parameter value and an output parameter value which is a result of processing that a processing device performs as additional learning data.