Invention Grant
- Patent Title: Method of correcting mask pattern and method of manufacturing reticle
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Application No.: US15218284Application Date: 2016-07-25
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Publication No.: US10012900B2Publication Date: 2018-07-03
- Inventor: Jong-su Kim , Shuichi Tamamushi , In-kyun Shin , Sung-il Lee , Jin Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2015-0134009 20150922
- Main IPC: G03B27/32
- IPC: G03B27/32 ; G03B27/52 ; G06F17/50 ; G21K5/00 ; G03F1/70 ; G03F7/20 ; G03F1/78

Abstract:
A method of manufacturing a reticle, the method including preparing a substrate, determining position data of a pattern to be formed on the substrate, and setting a primary exposure condition to form the pattern; performing a primary exposure simulation regarding the substrate based on the position data of the pattern and the primary exposure condition; calculating a primary deformation rate of the substrate, which is generated in the primary exposure simulation; correcting the position data of the pattern based on the primary deformation rate of the substrate to provide a corrected position data of the pattern; and exposing the substrate under the primary exposure condition based on the corrected position data of the pattern.
Public/Granted literature
- US20170082921A1 METHOD OF CORRECTING MASK PATTERN AND METHOD OF MANUFACTURING RETICLE Public/Granted day:2017-03-23
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