- 专利标题： Method for manufacturing semiconductor device using high speed epitaxial lift-off and template for III-V direct growth and semiconductor device manufactured using the same
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申请号： US14854221申请日： 2015-09-15
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公开(公告)号： US10014216B2公开(公告)日： 2018-07-03
- 发明人: Sanghyeon Kim , Daemyeong Geum , Min Su Park , Won Jun Choi
- 申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
- 申请人地址： KR Seoul
- 专利权人： Korea Institute of Science and Technology
- 当前专利权人： Korea Institute of Science and Technology
- 当前专利权人地址： KR Seoul
- 代理机构： NSIP Law
- 优先权： KR10-2015-0069836 20150519
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/20 ; H01L21/36 ; H01L21/78 ; H01L21/683 ; H01L21/18 ; H01L31/0304 ; H01L29/267 ; H01L29/66 ; H01L29/861 ; H01L29/20
摘要：
Disclosed is a method for manufacturing a semiconductor device, which includes providing a template having a first substrate and a patterned first III-V group compound layer located on the first substrate, forming a sacrificial layer on the patterned first III-V group compound layer by epitaxial growth, forming a second III-V group compound layer on the sacrificial layer by epitaxial growth, bonding a second substrate made of silicon onto the second III-V group compound layer, and separating the second III-V group compound layer and the second substrate from the template by removing the sacrificial layer.
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