公开(公告)号：US10371571B2

公开(公告)日：2019-08-06

申请号：US15926366

申请日：2018-03-20

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY ,  UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Seung Hyub Baek ,  Tae Hyeon Kil ,  Sanghyeon Kim ,  Won Jun Choi ,  Jeong Min Baik ,  Ki-Suk Lee

IPC: G01J1/42 ,  G01J5/02 ,  G01J5/04 ,  G01J5/20 ,  H01L21/02

Abstract: Disclosed is a resistor thin film for micro-bolometer for growth of a vanadium dioxide (VO2) thin film in tetragonal VO2 crystal phase by deposition of VO2 on oxide with perovskite structure and a method for fabricating the same, and the resistor thin film for micro-bolometer according to the present disclosure includes a silicon substrate, an oxide thin film with perovskite structure formed on the silicon substrate, and a VO2 thin film in tetragonal crystal phase formed on the oxide thin film with perovskite structure.

公开(公告)号：US10014216B2

公开(公告)日：2018-07-03

申请号：US14854221

申请日：2015-09-15

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sanghyeon Kim ,  Daemyeong Geum ,  Min Su Park ,  Won Jun Choi

IPC: H01L21/02 ,  H01L21/20 ,  H01L21/36 ,  H01L21/78 ,  H01L21/683 ,  H01L21/18 ,  H01L31/0304 ,  H01L29/267 ,  H01L29/66 ,  H01L29/861 ,  H01L29/20

CPC classification number: H01L21/78 ,  H01L21/185 ,  H01L21/6835 ,  H01L29/267 ,  H01L29/66219 ,  H01L29/861 ,  H01L31/0304 ,  H01L31/184 ,  H01L31/1892 ,  Y02E10/544 ,  Y02P70/521

Abstract: Disclosed is a method for manufacturing a semiconductor device, which includes providing a template having a first substrate and a patterned first III-V group compound layer located on the first substrate, forming a sacrificial layer on the patterned first III-V group compound layer by epitaxial growth, forming a second III-V group compound layer on the sacrificial layer by epitaxial growth, bonding a second substrate made of silicon onto the second III-V group compound layer, and separating the second III-V group compound layer and the second substrate from the template by removing the sacrificial layer.

公开(公告)号：US09190541B2

公开(公告)日：2015-11-17

申请号：US13906618

申请日：2013-05-31

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jin-Dong Song ,  Eunhye Lee ,  Min Hwan Bae ,  Won Jun Choi ,  Jae Jin Yoon ,  Il Ki Han

IPC: H01L33/00 ,  H01L31/0216 ,  H01L33/44

CPC classification number: H01L31/02168 ,  H01L33/44 ,  Y02E10/50

Abstract: In an aspect of the present disclosure, there is disclosed a manufacture method of an antireflection coating using a self-assembly nano structure, which includes forming a first metal droplet on a substrate by means of droplet epitaxy, depositing a first non-metal on the formed first metal droplet, and forming a first nano compound crystal by means of self-assembly of the deposited first non-metal and the first metal droplet.

Abstract translation: 在本公开的一方面，公开了使用自组装纳米结构的抗反射涂层的制造方法，其包括通过液滴外延在基板上形成第一金属液滴，在第一非金属上沉积第一金属液滴 形成第一金属液滴，并通过沉积的第一非金属和第一金属液滴的自组装形成第一纳米复合晶体。

公开(公告)号：US11052349B2

公开(公告)日：2021-07-06

申请号：US16695185

申请日：2019-11-26

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Kyung Guen Song ,  Won Jun Choi ,  Jae Won Shin ,  Jin-soo Cho ,  Dasom Wang

IPC: B01D61/36 ,  B01D3/00 ,  B01D1/00 ,  C02F1/44 ,  C02F1/14

Abstract: The present disclosure to an apparatus for membrane distillation using a solar absorber and a heat pump, in which in the implementation of a membrane distillation process for producing treated water using a temperature difference between raw water and a coolant, raw water is heated using the solar absorber with improved heat collection efficiency, and through this, the treated water production efficiency of the membrane distillation process is improved.

公开(公告)号：US09941168B1

公开(公告)日：2018-04-10

申请号：US15631309

申请日：2017-06-23

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sanghyeon Kim ,  Hyung-jun Kim ,  Jae-Phil Shim ,  Seong Kwang Kim ,  Won Jun Choi

IPC: H01L21/78 ,  H01L21/306 ,  H01L21/02

CPC classification number: H01L21/7813 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/30617

Abstract: A method for manufacturing a semiconductor device by epitaxial lift-off includes: forming a sacrificial layer containing an III-V compound on a first substrate, forming a device layer on the sacrificial layer, patterning the sacrificial layer and the device layer into a shape having an extending portion along a first direction determined based on a surface orientation of the III-V compound of the sacrificial layer, bonding the patterned device layer onto a second substrate, and etching the sacrificial layer by using an etching solution in a state where the device layer is bonded onto the second substrate, to remove the sacrificial layer and the first substrate. Using the method for manufacturing a semiconductor device, it is possible to improve a process yield and increase a process speed by using the difference in etch rates depending on crystal orientation, which is an inherent characteristic of an III-V compound, during an ELO process.

公开(公告)号：US08941931B2

公开(公告)日：2015-01-27

申请号：US13687098

申请日：2012-11-28

Applicant: Korea Institute of Science and Technology

Inventor： Seong Il Kim ,  Young Hwan Kim ,  Won Jun Choi ,  Yong Tae Kim

IPC: G02B9/00 ,  G02B3/08 ,  F24J2/08 ,  H01L31/052 ,  F24J2/46

CPC classification number: G02B3/08 ,  F24S23/00 ,  F24S23/31 ,  F24S40/52 ,  F24S50/80 ,  H01L31/054 ,  H01L31/0543 ,  Y02E10/43 ,  Y02E10/44 ,  Y02E10/52

Abstract: Provided is a concentration ratio controlling apparatus for concentration type solar cells. The concentration ratio controlling apparatus may include a first condensing unit to primarily concentrate quantity of light that is irradiated from a light source; a second condensing unit disposed between a lower portion of the first condensing unit and a solar cell to secondarily concentrate the quantity of light that has passed through the first condensing unit and thereby irradiate the secondarily concentrated light toward the solar cell; an adjustment unit disposed in an optical path between the light source and the first condensing unit to adjust a concentration area of the first condensing unit based on an external force, and thereby adjust the quantity of light that is concentrated by the first condensing unit; and a control unit to analyze an input signal and thereby supply a corresponding drive control signal to the adjustment unit.

Abstract translation: 提供了一种用于浓缩型太阳能电池的浓度比控制装置。 浓缩比控制装置可以包括：第一聚光单元，用于主要集中从光源照射的光量; 第二聚光单元，设置在第一聚光单元的下部和太阳能电池之间，以二次浓缩已经通过第一聚光单元的光量，从而将二次浓缩的光照射到太阳能电池; 调整单元，设置在光源和第一聚光单元之间的光路中，以基于外力调节第一聚光单元的浓度区域，从而调节由第一冷凝单元聚集的光量; 以及控制单元，用于分析输入信号，从而将相应的驱动控制信号提供给调节单元。

公开(公告)号：US08895412B2

公开(公告)日：2014-11-25

申请号：US13668526

申请日：2012-11-05

Applicant: Korea Institute of Science and Technology

Inventor： Seung Kyu Ha ,  Su Youn Kim ,  Il Ki Han ,  Jin Dong Song ,  Won Jun Choi

IPC: H01L21/20 ,  H01L21/02 ,  H01L29/12 ,  B82Y10/00 ,  H01L29/06 ,  G01N21/00 ,  H01L29/76 ,  B82Y40/00

CPC classification number: H01L21/02104 ,  B82Y10/00 ,  B82Y40/00 ,  G01N21/00 ,  H01L21/02546 ,  H01L21/02601 ,  H01L21/02631 ,  H01L29/0665 ,  H01L29/127 ,  H01L29/7613 ,  Y10S977/84

Abstract: Disclosed is a nano-structure manufacturing method which includes: forming a first semiconductor composite layer, a semiconductor quantum structure layer, a second semiconductor composite layer, and a semiconductor quantum dot layer on a substrate in order; thermally treating the semiconductor quantum dot layer so that quantum dots of the semiconductor quantum dot layer are aggregated; and performing an etching process by using the aggregated quantum dots as a mask.

Abstract translation: 公开了一种纳米结构制造方法，其包括：依次在基板上形成第一半导体复合层，半导体量子结构层，第二半导体复合层和半导体量子点层; 热处理半导体量子点层，使半导体量子点层的量子点聚集; 并且通过使用聚合的量子点作为掩模来执行蚀刻处理。