Invention Grant
- Patent Title: Semiconductor device having a defined oxygen concentration
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Application No.: US15650504Application Date: 2017-07-14
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Publication No.: US10014400B2Publication Date: 2018-07-03
- Inventor: Helmut Oefner , Nico Caspary , Mohammad Momeni , Reinhard Ploss , Francisco Javier Santos Rodriguez , Hans-Joachim Schulze
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102014114683 20141009
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L21/02 ; H01L29/66 ; H01L21/324 ; H01L21/268 ; H01L29/10 ; H01L21/18 ; H01L21/322 ; H01L21/28 ; H01L21/225
Abstract:
A semiconductor device includes: a semiconductor substrate having a first side, a second side opposite the first side, and a thickness; at least one semiconductor component integrated in the semiconductor substrate; a first metallization at the first side of the semiconductor substrate; and a second metallization at the second side of the semiconductor substrate. The semiconductor substrate has an oxygen concentration along a thickness line of the semiconductor substrate which has a global maximum at a position of 20% to 80% of the thickness relative to the first side. The global maximum is at least 2-times larger than the oxygen concentrations at each of the first side and the second side of the semiconductor substrate.
Public/Granted literature
- US20170316929A1 Semiconductor Device Having a Defined Oxygen Concentration Public/Granted day:2017-11-02
Information query
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